MMBTA56 datasheet, PDF - EEWORLD Datasheet

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MMBTA56: Description500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size804KB，1 Pages; ManufacturerHTSEMI（ Jin Yu Semiconductor ）; Websitehttp://www.htsemi.com

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MMBTA56 Overview

500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR

MMBTA56 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.5000 A
Maximum Collector-Emitter Voltage	80 V
Processing package description	PLASTIC PACKAGE-3
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Transistor type	Universal small signal
Minimum DC amplification factor	100
Rated crossover frequency	50 MHz

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MMBTA56

TRANSISTOR(PNP)

FEATURES



General Purpose Amplifier Applications

MARKING: 2GM

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

ΘJA

T

j

T

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-80

-4

-500

225

555

150

-55½+150

Unit

V

mA

mW

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter-base breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE

f

T

Test

I

C

=-1mA, I

B

=0

I

E

=-100µA, I

C

=0

V

CB

=-80V, I

E

=0

V

CE

=-60V, I

B

=0

V

EB

=-4V, I

C

=0

V

CE

=-1V, I

C

=-10mA

V

CE

=-1V, I

C

=-100mA

I

C

=-100mA, I

B

=-10mA

V

CE

=-1V, I

C

=-100mA

V

CE

=-1V,I

C

=-100mA, f=100MHz

50

100

-0.25

-1.2

V

MHz

conditions

Min

-80

-4

-0.1

400

Typ

Max

Unit

V

µA

I

C

=-100µA, I

E

=0

１　

JinYu

semiconductor

www.htsemi.com

Ｄ½½½：２０１１／０５

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