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RU40L10H

Description
P-Channel Advanced Power MOSFET
File Size295KB,9 Pages
ManufacturerRuichips
Websitehttp://www.ruichips.com/
Download Datasheet View All

RU40L10H Overview

P-Channel Advanced Power MOSFET

RU40L10H
P-Channel Advanced Power MOSFET
MOSFET
Features
• -40V/-9.5A,
R
DS (ON)
=19
mΩ
(Type) @ V
GS
=-10V
R
DS (ON)
=30
mΩ
(Type) @ V
GS
=-4.5V
• Super High Dense Cell Design
Reliable and Rugged
ESD Protected
Pin Description
SOP-8
• Lead Free and Green Available
Applications
DC-DC Converter.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
P-Channel MOSFET
Rating
-40
±20
150
-55 to 150
T
C
=25°C
-9.5
Unit
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=70°C
P
D
R
θJA
-38
A
A
-9.5
-8
3.1
2.0
40
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=70°C
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– OCT., 2011
www.ruichips.com
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