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RU4Z

Description
2 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size115KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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RU4Z Overview

2 A, 200 V, SILICON, RECTIFIER DIODE

SIYU
R
RU4Z / RU4M / RU4AM
Plastic Fast Recover Rectifier
Reverse Voltage 200 to 600V
Forward Current 3.5A
特征
Features
·反向漏电流½
Low reverse leakage
.052(1.3)
DIA
.048(1.2)
塑封快恢复整流二极管
反向电压
200 --- 600V
正向电流
3.5 A
DO-27
·正向浪涌承受½力较强
High forward surge capability
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
秒,
0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
1.0(25.4)
MIN
.375(9.5)
.335(8.5)
.220(5.6)
DIA
.197(5.0)
1.0(25.4)
MIN
机械数据
Mechanical Data
·端子: 镀锡½向引线
Terminals: Plated axial leads
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
RU4Z
200
140
200
RU4M
400
280
400
3.5
70
15
RU4AM
600
420
600
单½
Unit
V
V
V
A
A
℃/W
V
RRM
最大均方根电压
Maximum RMS voltage
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj, TSTG
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55
---
+150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
RU4Z
RU4M
1.3
10
100
100
75
RU4AM
单½
Unit
V
μA
nS
pF
I
F
= 3.5A
TA= 25℃
TA=100℃
I
F
=0.5A I
R
=1.0A I
RR
=0.25A
V
F
I
R
trr
C
j
最大反向电流
Maximum reverse current
最大反向恢复时间
MAX. Reverse Recovery Time
典型结电容
Type junction capacitance
V
R
= 4.0V, f = 1MHz
大昌电子
DACHANG ELECTRONICS

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