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DB153

Description
1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size126KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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DB153 Overview

1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

SIYU
R
塑封硅整流桥堆
反向电压
50---1000V
正向电流
1.5 A
DB
DB151 ...... DB157
Single-phase Silicon Bridge Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.5 A
特征
Features
·高电流浪涌承受½力
High surge current Capability
·高温焊接保证High tempererature soldering guaranteed:
260℃/10
260℃/10 seconds
·引线和管½皆符合RoHS标准。
Lead and body according with RoHS standard
机械数据
Mechanical Data
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
Unit:inch(mm)
·安装½½:
任意
Mounting Position: Any
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
TC =100℃
最大正向平均整流电流
Maximum average forward rectified current
Ratings at 25℃ ambient temperature unless otherwise specified.
DB151 DB152 DB153 DB154 DB155 DB156 DB157
50
35
50
100
70
100
200
140
200
400
280
400
1.5
50
40
600
420
600
800
560
800
1000
700
1000
单½
Unit
V
V
V
A
A
℃/W
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj, TSTG
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55--- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
DB151 DB152 DB153 DB154 DB155 DB156 DB157
1.1
10
500
40
单½
Unit
V
μA
I
F
= 1.5A
TA= 25℃
TA = 125℃
V
F
最大反向电流
Maximum reverse current
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
I
R
Cj
pF
大昌电子
DACHANG ELECTRONICS

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DB153 DB151_15 DB152 DB154 DB155 DB156 DB157 DB151
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