DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA
TRANSISTOR(PNP)
FEATURES
· Built-in bias resistors enable the configuration of an
inverter circuit without connecting ex temal input resistors.
· The bias resistors conisit of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
Eliminating parasitic effects.
· Only the onoff conditions need to be set for operation,
/
marking device design easy.
PIN CONNENCTIONS AND MARKING
DTA114TE
DTA114TUA
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 94
SOT-323
Addreviated symbol: 94
SOT-523
DTA114TKA
DTA114TCA
DTA114ECA
(1) Base
(2) Emitter
(3) Collector
SOT-23
SOT-23-3L
Addreviated symbol: 94
Addreviated symbol: 94
DTA114TSA
TO-92S
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA
MAXIMUM RATINGS*
T
A
=25
℃
unless otherwise noted
Symbol
Parameter
E
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
150
LIMITS(DTA114T□)
UA
KA
-50
-50
-5
-100
200
-55~+150
300
CA
SA
V
V
V
mA
mW
℃
Units
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Imput resistor
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R1
unless
Test
otherwise
specified)
MIN
-50
-50
-5
-0.5
-0.5
100
250
600
-0.3
250
7
10
13
V
MHz
kΩ
TYP
MAX
UNIT
V
V
V
uA
uA
conditions
Ic=-
50µ
A,I
E
=0
Ic=-
1
mA,I
B
=0
I
E
=-
50µ
A,I
C
=0
V
CB
=-
50
V,I
E
=0
V
EB
=-
4
V,I
C
=0
V
CE
=-
5
V,I
C
=-
1
mA
I
C
=-10mA,I
B
=-1mA
V
CE
=-
10
V,I
C
=-
5
mA, f=
100
MHz
Typical Characteristics
２
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
ARM Technology
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