EG01 datasheet, PDF - EEWORLD Datasheet

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EG01: Description0.7 A, 400 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size117KB，2 Pages; ManufacturerDACHANG; Websitehttp://www.dachang.com.cn

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EG01 Overview

0.7 A, 400 V, SILICON, SIGNAL DIODE

EG01 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	AXIAL PACKAGE-2
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	MATTE Tin
Terminal location	AXIAL
Packaging Materials	UNSPECIFIED
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0500 us
Maximum repetitive peak reverse voltage	400 V
Maximum average forward current	0.7000 A

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SIYU

塑封超快速整流二极管

反向电压

200 --- 1000V

正向电流

0.5 --- 0.7A

EG01Z / EG01 / EG01A / EG01C

Plastic Ultra-Fast Recover Rectifiers

Reverse Voltage 200 to 1000V

Forward Current 0.5 to 0.7A

特征

Features

·反向漏电流½

Low reverse leakage

·正向浪涌承受½力较强

High forward surge capability

.034(0.9)

DIA

.028(0.7)

DO-41

1.0(25.4)

MIN

.205(5.2)

.166(4.2)

.107(2.7)

DIA

.080(2.0)

1.0(25.4)

MIN

·高温焊接保证

High temperature soldering guaranteed:

260℃/10

秒,

0.375" (9.5mm)引线长度。

260℃/10 seconds, 0.375" (9.5mm) lead length,

·引线可承受5 磅

(2.3kg)

拉力。

5 lbs. (2.3kg) tension

·引线和管½皆符合RoHS标准。

Lead and body according with RoHS standard

机械数据

Mechanical Data

·端子: 镀锡½向引线

Terminals: Plated axial leads

·极性: 色环端为负极

Polarity: Color band denotes cathode end

·安装½½: 任意

Mounting Position: Any

Unit：inch（mm）

极限值和温度特性

TA = 25℃

除非另有规定。

Maximum Ratings & Thermal Characteristics

符号

Symbols

最大可重复峰值反向电压

Maximum repetitive peak reverse voltage

Ratings at 25℃ ambient temperature unless otherwise specified.

EG 01Z

200

140

200

0.7

EG 01

400

280

400

EG 01A

600

420

600

0.5

EG 01C

1000

700

1000

单½

Unit

℃/W

RRM

最大均方根电压

Maximum RMS voltage

RMS

F(AV)

FSM

θJA

Tj, TSTG

最大直流阻断电压

Maximum DC blocking voltage

最大正向平均整流电流

Maximum average forward rectified current

峰值正向浪涌电流 8.3ms单一正弦半波

Peak forward surge current 8.3 ms single half sine-wave

典型热阻

Typical thermal resistance

工½结温和存储温度

Operating junction and storage temperature range

-55 --- +150

℃

电特性

TA = 25℃

除非另有规定。

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

符号

Symbols

最大正向电压

Maximum forward voltage

EG 01Z

1.9

EG 01

2.0

5.0

100

EG 01A

2.0

EG 01C

3.3

单½

Unit

μA

= 1.0A

TA= 25℃

TA=100℃

=0.5A I

=1.0A I

=0.25A

trr

最大反向电流

Maximum reverse current

最大反向恢复时间

MAX. Reverse Recovery Time

典型结电容

Type junction capacitance

= 4.0V, f = 1MHz

大昌电子

DACHANG ELECTRONICS

EG01 Related Products

	EG01	EG01Z_15	EG01Z	EG01A	EG01C
Description	0.7 A, 400 V, SILICON, SIGNAL DIODE	0.7 A, 400 V, SILICON, SIGNAL DIODE	0.7 A, 200 V, SILICON, SIGNAL DIODE	0.5 A, 600 V, SILICON, SIGNAL DIODE	0.5 A, SILICON, SIGNAL DIODE
Number of terminals	2	2	2	-	-
Number of components	1	1	1	-	-
Processing package description	AXIAL PACKAGE-2	AXIAL PACKAGE-2	AXIAL PACKAGE-2	-	-
Lead-free	Yes	Yes	Yes	-	-
EU RoHS regulations	Yes	Yes	Yes	-	-
state	ACTIVE	ACTIVE	DISCONTINUED	-	-
packaging shape	round	round	round	-	-
Package Size	LONG FORM	LONG FORM	LONG FORM	-	-
Terminal form	Wire	Wire	Wire	-	-
terminal coating	MATTE Tin	MATTE Tin	MATTE Tin	-	-
Terminal location	AXIAL	AXIAL	AXIAL	-	-
Packaging Materials	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	-
structure	single	single	single	-	-
Shell connection	isolation	isolation	isolation	-	-
Diode component materials	silicon	silicon	silicon	-	-
Diode type	Signal diode	Signal diode	Signal diode	-	-
Maximum reverse recovery time	0.0500 us	0.0500 us	0.1000 us	-	-
Maximum repetitive peak reverse voltage	400 V	400 V	200 V	-	-
Maximum average forward current	0.7000 A	0.7000 A	0.7000 A	-	-

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