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EG01A

Description
0.5 A, 600 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size117KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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EG01A Overview

0.5 A, 600 V, SILICON, SIGNAL DIODE

SIYU
R
塑封超快速整流二极管
反向电压
200 --- 1000V
正向电流
0.5 --- 0.7A
EG01Z / EG01 / EG01A / EG01C
Plastic Ultra-Fast Recover Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 0.5 to 0.7A
特征
Features
·反向漏电流½
Low reverse leakage
·正向浪涌承受½力较强
High forward surge capability
.034(0.9)
DIA
.028(0.7)
DO-41
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
.107(2.7)
DIA
.080(2.0)
1.0(25.4)
MIN
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
秒,
0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据
Mechanical Data
·端子: 镀锡½向引线
Terminals: Plated axial leads
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
EG 01Z
200
140
200
0.7
15
EG 01
400
280
400
EG 01A
600
420
600
0.5
10
65
EG 01C
1000
700
1000
单½
Unit
V
V
V
A
A
℃/W
V
RRM
最大均方根电压
Maximum RMS voltage
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj, TSTG
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
EG 01Z
1.9
EG 01
2.0
5.0
100
50
18
EG 01A
2.0
EG 01C
3.3
单½
Unit
V
μA
I
F
= 1.0A
TA= 25℃
TA=100℃
I
F
=0.5A I
R
=1.0A I
RR
=0.25A
V
F
I
R
trr
C
j
最大反向电流
Maximum reverse current
最大反向恢复时间
MAX. Reverse Recovery Time
75
nS
pF
典型结电容
Type junction capacitance
V
R
= 4.0V, f = 1MHz
大昌电子
DACHANG ELECTRONICS

EG01A Related Products

EG01A EG01Z_15 EG01 EG01Z EG01C
Description 0.5 A, 600 V, SILICON, SIGNAL DIODE 0.7 A, 400 V, SILICON, SIGNAL DIODE 0.7 A, 400 V, SILICON, SIGNAL DIODE 0.7 A, 200 V, SILICON, SIGNAL DIODE 0.5 A, SILICON, SIGNAL DIODE
Number of terminals - 2 2 2 -
Number of components - 1 1 1 -
Processing package description - AXIAL PACKAGE-2 AXIAL PACKAGE-2 AXIAL PACKAGE-2 -
Lead-free - Yes Yes Yes -
EU RoHS regulations - Yes Yes Yes -
state - ACTIVE ACTIVE DISCONTINUED -
packaging shape - round round round -
Package Size - LONG FORM LONG FORM LONG FORM -
Terminal form - Wire Wire Wire -
terminal coating - MATTE Tin MATTE Tin MATTE Tin -
Terminal location - AXIAL AXIAL AXIAL -
Packaging Materials - UNSPECIFIED UNSPECIFIED UNSPECIFIED -
structure - single single single -
Shell connection - isolation isolation isolation -
Diode component materials - silicon silicon silicon -
Diode type - Signal diode Signal diode Signal diode -
Maximum reverse recovery time - 0.0500 us 0.0500 us 0.1000 us -
Maximum repetitive peak reverse voltage - 400 V 400 V 200 V -
Maximum average forward current - 0.7000 A 0.7000 A 0.7000 A -
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