FMMT491
TRANSISTOR (NPN)
FEATURES
Low equivalent on-resistance
1.
BASE
2.
EMITTER
3.
COLLECTOR
SOT-23
Marking :491
MAXIMUM RATINGS(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
80
60
5
1
250
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
1
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
1
1
Test
conditions
MIN
80
60
5
TYP
MAX
UNIT
V
V
V
I
C
=100μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V,I
C
=1mA
V
CE
=5V,I
C
=500mA
V
CE
=5V,I
C
=1A
V
CE
=5V,I
C
=2A
0.1
0.1
100
100
80
30
0.25
0.5
1.1
1
150
10
300
μA
μA
h
FE(4)
1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
1
V
CE(sat)1
1
I
C
=500mA,I
B
=50mA
I
C
=1A,I
B
=100mA
I
C
=1A,I
B
=100mA
V
CE
=5V,I
C
=1A
V
CE
=10V,I
C
=50mA,,f=100MHz
V
CB
=10V,f=1MHz
V
V
V
V
MHz
pF
V
CE(sat)2
1
V
BE(sat)
1
V
BE
1
f
T
C
ob
Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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