FMMT493 datasheet, PDF - EEWORLD Datasheet

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FMMT493: Description1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size388KB，1 Pages; ManufacturerHTSEMI（ Jin Yu Semiconductor ）; Websitehttp://www.htsemi.com

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FMMT493 Overview

1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR

FMMT493 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	100 V
Processing package description	SOT-23, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.5000 W
Transistor type	Universal small signal
Minimum DC amplification factor	20
Rated crossover frequency	150 MHz

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FMMT493

TRANSISTOR (NPN)

SOT–23

FEATURES



Complementary Type FMMT593

MARKING:493

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

ΘJA

T

j

T

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

120

100

5

1000

250

500

150

-55½+150

Unit

V

mA

mW

℃/W

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CES

I

EBO

h

FE(1)

*

h

FE(2)

*

DC current gain

h

FE(3)

*

h

FE(4)

*

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

V

CE(sat)1

*

V

CE(sat)2

*

V

BE(sat)

*

V

BE

*

f

T

C

ob

Test

conditions

Min

120

100

5

0.1

100

60

20

0.3

0.6

1.15

1

150

10

V

MHz

pF

300

Typ

Max

Unit

V

µA

I

C

=100µA, I

E

=0

I

C

=10mA, I

B

=0

I

E

=100µA, I

C

=0

V

CB

=100V, I

E

=0

V

CES

=100V, I

E

=0

V

EB

=4V, I

C

=0

V

CE

=10V, I

C

=1mA

V

CE

=10V, I

C

=250mA

V

CE

=10V, I

C

=0.5A

V

CE

=10V, I

C

=1A

I

C

=500mA, I

B

=50mA

I

C

=1A, I

B

=100mA

I

C

=1A, I

B

=100mA

V

CE

=10V, I

C

=1A

V

CE

=10V,I

C

=50mA, f=100MHz

V

CB

=10V, I

E

=0, f=1MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

１　

JinYu

semiconductor

www.htsemi.com

Ｄ½½½：２０１１／０５

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