Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
PBYR325CTD series
SYMBOL
QUICK REFERENCE DATA
V
R
= 20 V/ 25 V
I
O(AV)
= 3 A
V
F
≤
0.4 V
SOT428
DESCRIPTION
tab
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual schottky rectifier diodes
intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
The PBYR325CTD series is
supplied in the SOT428 surface
mounting package.
PINNING
PIN
1
2
3
tab
anode 1
cathode
1
anode 2
2
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
CONDITIONS
PBYR3
-
-
T
mb
≤
125 ˚C
square wave;
δ
= 0.5; T
mb
≤
144 ˚C
square wave;
δ
= 0.5; T
mb
≤
144 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
MAX.
20CTD
20
20
20
3
3
55
60
1
150
175
25CTD
25
25
25
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1
it is not possible to make connection to pin 2 of the SOT428 package
February 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
pcb mounted, minimum footprint, FR4
board
PBYR325CTD series
MIN.
-
-
-
TYP. MAX. UNIT
-
-
50
5
4
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage
Reverse current
Junction capacitance
CONDITIONS
I
F
= 1.5 A; T
j
= 125˚C
I
F
= 3 A; T
j
= 125˚C
I
F
= 3 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.34
0.39
0.47
0.05
4
117
0.4
0.5
0.6
2
8
-
V
V
V
mA
mA
pF
February 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR325CTD series
1
Forward dissipation, PF (W)
Vo = 0.3 V
Rs = 0.067 Ohms
PBYR325CTD Tmb(max) / C
D = 1.0
0.5
145
146
100mA
Reverse current, IR (A)
150 C
PBYR325CTD
0.8
0.2
0.6
0.1
10mA
125 C
100 C
75 C
147
148
I
t
p
D=
t
p
T
149
T
t
150
2.5
1mA
0.4
100uA
50 C
10uA Tj = 25 C
0.2
0
0
0.5
1
1.5
2
Average forward current, IF(AV) (A)
1uA
0
5
10
15
Reverse voltage, VR (V)
20
25
Fig.1. Maximum forward dissipation per diode
P
F
= f(I
F(AV)
); square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Forward dissipation, PF (W) PBYR325CTD Tmb(max) / C
146
a = 1.57
Vo = 0.3 V
Rs = 0.067 ohms
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1000
Junction capacitance, Cd (pF)
PBYR325CTD
1.9
2.2
2.8
4
148
100
147
149
0
0.5
1
Average forward current, IF(AV) (A)
150
1.5
10
1
10
Reverse voltage, VR (V)
100
Fig.2. Maximum forward dissipation per diode
P
F
= f(I
F(AV)
); sinusoidal current waveform where
a = form factor = I
F(RMS)
/ I
F(AV)
.
PBYR325CTD
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
6
5
4
3
2
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
typ
10
Transient thermal impedance, Zth j-mb (K/W)
1
max
0.1
0.01
1
0
P
D
t
p
D=
t
p
T
t
0
0.2
0.4
0.6
Forward voltage, VR (V)
0.8
1
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR325CTD
Fig.3. Typical and maximum forward characteristic
per diode I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
February 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
6.73 max
1.1
2.38 max
0.93 max
5.4
PBYR325CTD series
tab
4 min
6.22 max
10.4 max
4.6
2
1
3
0.5 min
0.3
0.5
0.5
0.8 max
(x2)
2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
February 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
PBYR325CTD series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1998
5
Rev 1.000
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