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RU1HE3D

Description
N-Channel Advanced Power MOSFET
File Size242KB,8 Pages
ManufacturerRuichips
Websitehttp://www.ruichips.com/
Download Datasheet View All

RU1HE3D Overview

N-Channel Advanced Power MOSFET

RU1HE3D
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/3A,
R
DS (ON)
=
130mΩ
(Type)
@
V
GS
=10V
R
DS (ON)
=
140mΩ
(Type)
@
V
GS
=4.5V
ESD Protected
Reliable and Rugged
• Ultra Low On-Resistance
100% avalanche tested
• Lead Free and Green Available
Pin Description
SOT-223
Applications
Power Management
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
±20
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=70°C
T
C
=25°C
T
C
=70°C
3
12
3
2.5
2.5
1.6
50
W
°C/W
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
A
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
I
D
P
D
R
θJA
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – MAR., 2011
www.ruichips.com
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