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FCH47N60N_1112

Description
47 A, 600 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Categorysemiconductor    Discrete semiconductor   
File Size282KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FCH47N60N_1112 Overview

47 A, 600 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

FCH47N60N_1112 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage600 V
Processing package descriptionROHS COMPLIANT PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current47 A
Rated avalanche energy3068 mJ
Maximum drain on-resistance0.0620 ohm
Maximum leakage current pulse141 A
FCH47N60N 600V N-Channel MOSFET
SupreMOS
FCH47N60N
N-Channel MOSFET
600V, 47A, 62mΩ
Features
• 650V @T
J
= 150
o
C
• R
DS(on)
= 51.5mΩ ( Typ.)@ V
GS
= 10V, I
D
=23.5 A
• Ultra Low Gate Charge ( Typ.Q
g
=115nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
December 2011
TM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
G D
S
TO-247
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
- Derate above 25 C
o
o
Parameter
Ratings
600
±30
o
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/
o
C
o
o
-Continuous (T
C
= 25 C)
-Continuous (T
C
=
- Pulsed
100
o
C)
(Note 1)
(Note 2)
47
29.7
141
3068
15.7
3.7
100
(Note 3)
20
368
2.94
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
Ratings
0.34
0.24
40
o
Units
C/W
©2010 Fairchild Semiconductor Corporation
FCH47N60N Rev. C1
1
www.fairchildsemi.com
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