W25X40BVSSIG datasheet, PDF - EEWORLD Datasheet

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W25X40BVSSIG: Description4M X 1 FLASH 2.7V PROM, PDSO8; Categorystorage storage; File Size2MB，51 Pages; ManufacturerWinbond Electronics Corporation; Websitehttp://www.winbond.com.tw; Environmental Compliance

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W25X40BVSSIG Overview

4M X 1 FLASH 2.7V PROM, PDSO8

W25X40BVSSIG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Winbond Electronics Corporation
Parts packaging code	SOIC
package instruction	SOIC-8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum clock frequency (fCLK)	80 MHz
Data retention time - minimum	20
Durability	100000 Write/Erase Cycles
JESD-30 code	S-PDSO-G8
length	5.28 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	1
Number of functions	1
Number of terminals	8
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX1
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP8,.3
Package shape	SQUARE
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	2.16 mm
Serial bus type	SPI
Maximum standby current	0.000005 A
Maximum slew rate	0.025 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
type	NOR TYPE
width	5.28 mm
write protect	HARDWARE/SOFTWARE

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W25X10BV/20BV/40BV

1M-BIT, 2M-BIT AND 4M-BIT

SERIAL FLASH MEMORY WITH

4KB SECTORS AND DUAL I/O SPI

- 1-

Publication Release Date: August 20,, 2009

Preliminary -- Revision B

W25X10BV/20BV/40BV

Table of Contents

GENERAL DESCRIPTION ......................................................................................................... 4

FEATURES ................................................................................................................................. 4

PIN CONFIGURATION SOIC 150-MIL / 208-MIL ...................................................................... 5

PAD CONFIGURATION WSON 6X5-MM .................................................................................. 5

PIN CONFIGURATION PDIP 300-MIL ....................................................................................... 6

PIN DESCRIPTION SOIC 150 / 208-MIL, PDIP 300-MIL, WSON 6X5-MM............................... 6

6.1

6.2

6.3

6.4

6.5

6.6

Package Types ............................................................................................................... 7

Chip Select (/CS) ............................................................................................................ 7

Serial Data Input, Output and IOs (DI, DO, IO0 and IO1) .............................................. 7

Write Protect (/WP) ......................................................................................................... 7

HOLD (/HOLD) ............................................................................................................... 7

Serial Clock (CLK) .......................................................................................................... 7

BLOCK DIAGRAM ...................................................................................................................... 8

FUNCTIONAL DESCRIPTION ................................................................................................... 9

8.1

SPI OPERATIONS ......................................................................................................... 9

8.1.1

8.1.2

8.1.3

Standard SPI Instructions .................................................................................................9

Dual SPI Instructions ........................................................................................................9

Hold Function ...................................................................................................................9

Write Protect Features....................................................................................................10

8.2

WRITE PROTECTION.................................................................................................. 10

8.2.1

CONTROL AND STATUS REGISTERS ................................................................................... 11

9.1

STATUS REGISTER .................................................................................................... 11

9.1.1

9.1.2

9.1.3

9.1.4

9.1.5

9.1.6

9.1.7

BUSY..............................................................................................................................11

Write Enable Latch (WEL) ..............................................................................................11

Block Protect Bits (BP2, BP1, BP0) ................................................................................11

Top/Bottom Block Protect (TB) .......................................................................................11

Reserved Bits .................................................................................................................11

Status Register Protect (SRP) ........................................................................................12

Status Register Memory Protection ................................................................................13

Manufacturer and Device Identification ..........................................................................14

Instruction Set ................................................................................................................15

Write Enable (06h)..........................................................................................................16

Write Disable (04h) .........................................................................................................16

Read Status Register (05h) ............................................................................................17

Write Status Register (01h) ............................................................................................18

Read Data (03h) .............................................................................................................19

Fast Read (0Bh) .............................................................................................................20

9.2

INSTRUCTIONS ........................................................................................................... 14

9.2.1

9.2.2

9.2.3

9.2.4

9.2.5

9.2.6

9.2.7

9.2.8

-2-

W25X10BV/20BV/40BV

9.2.9

9.2.10

9.2.11

9.2.12

9.2.13

9.2.14

9.2.15

9.2.16

9.2.17

9.2.18

9.2.19

9.2.20

9.2.21

9.2.22

9.2.23

Fast Read Dual Output (3Bh) .........................................................................................21

Fast Read Dual I/O (BBh).............................................................................................22

Continuous Read Mode Bits (M7-0) .............................................................................24

Continuous Read Mode Reset (FFFFh) .......................................................................24

Page Program (02h) .....................................................................................................25

Sector Erase (20h) .......................................................................................................26

32KB Block Erase (52h) ...............................................................................................27

Block Erase (D8h) ........................................................................................................28

Chip Erase (C7h or 60h) ...............................................................................................29

Power-down (B9h) ........................................................................................................30

Release Power-down / Device ID (ABh) .......................................................................31

Read Manufacturer / Device ID (90h) ...........................................................................33

Read Manufacturer / Device ID Dual I/O (92h) .............................................................34

Read Unique ID Number (4Bh).....................................................................................35

JEDEC ID (9Fh) ...........................................................................................................36

10.

ELECTRICAL CHARACTERISTICS ......................................................................................... 37

10.1

10.2

10.3

10.4

10.5

10.6

10.7

10.8

10.9

10.10

Absolute Maximum Ratings .......................................................................................... 37

Operating Ranges......................................................................................................... 37

Power-up Timing and Write Inhibit Threshold .............................................................. 38

DC Electrical Characteristics ........................................................................................ 39

AC Measurement Conditions ........................................................................................ 40

AC Electrical Characteristics ........................................................................................ 41

AC Electrical Characteristics (cont’d) ........................................................................... 42

Serial Output Timing ..................................................................................................... 43

Input Timing .................................................................................................................. 43

Hold Timing ................................................................................................................. 43

8-Pin SOIC 150-mil (Package Code SN)...................................................................... 44

8-Pin SOIC 208-mil (Package Code SS) ...................................................................... 45

8-Pin PDIP 300-mil (Package Code DA) ...................................................................... 46

8-Contact 6x5mm WSON (Package Code ZP) ............................................................ 47

Valid Part Numbers and Top Side Marking .................................................................. 50

11.

PACKAGE SPECIFICATION .................................................................................................... 44

11.1

11.2

11.3

11.4

12.

ORDERING INFORMATION .................................................................................................... 49

12.1

REVISION HISTORY ............................................................................................................................ 51

-3-

Publication Release Date: August 20, 2009

Preliminary -- Revision B

W25X10BV/20BV/40BV

1. GENERAL DESCRIPTION

The W25X10BV (1M-bit), W25X20BV (2M-bit) and the W25X40BV (4M-bit) Serial Flash memories

provides a storage solution for systems with limited space, pins and power. The 25X series offers

flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code

download applications as well as storing voice, text and data. The devices operate on a single 2.7V to

3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. All

devices are offered in space-saving packages.

The W25X10BV/20BV/40BV arrays are organized into 512/1,024/2,048 programmable pages of 256-

bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages

can be erased in groups of 16 (sector erase), groups of 128 (32KB block erase), groups of 256 (block

erase) or the entire chip (chip erase). The W25X10BV/20BV/40BV has 32/64/128 erasable sectors

and 2/4/8 erasable 64KB blocks respectively. The small 4KB sectors allow for greater flexibility in

applications that require data and parameter storage. (See figure 2.)

The W25X10BV/20BV/40BV supports the standard Serial Peripheral Interface (SPI), and a high

performance dual output as well as Dual I/O SPI: Serial Clock, Chip Select, Serial Data DI (I/O0), DO

(I/O1). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of

208MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to

those of 8 and 16-bit Parallel Flash memories.

A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control

features, provide further control flexibility. Additionally, the device supports JEDEC standard

manufacturer and device identification.

2. FEATURES



Family of Serial Flash Memories

– W25X10BV: 1M-bit/128K-byte (131,072)

– W25X20BV: 2M-bit/256K-byte (262,144)

– W25X40BV: 4M-bit/512K-byte (524,288)

– 256-bytes per programmable page

– Uniform 4KB Sectors, 32KB & 64KB Blocks



SPI with Single / Dual Outputs / Dual I/O

– Clock, Chip Select, Data I/O, Data Out

– Optional Hold function for SPI flexibility



Data Transfer up to 208M-bits / second

– Clock operation to 104MHz

– Fast Read Dual Output instruction

– Auto-increment Read capability



Efficient “Continuous Read Mode”

– Low Instruction overhead

– Continuous Read

– As few as 8 clocks to address memory

– Allows true XIP (execute in place) operation



Software and Hardware Write Protection

– Write-Protect all or portion of memory

– Enable/Disable protection with /WP pin

– Top or bottom array protection



Flexible Architecture with 4KB sectors

– Sector Erase (4K-bytes)

– Block Erase (32K and 64K-byte)

– Page program up to 256 bytes <1ms

– More than 100,000 erase/write cycles

– More than 20-year retention



Low Power Consumption, Wide

Temperature Range

– Single 2.7 to 3.6V supply

– 4mA active current, 1µA Power-down (typ)

– -40° to +85°C operating range



Space Efficient Packaging

– 8-pin SOIC 150-mil

– 8-pin SOIC 208-mil

– 8-pad WSON 6x5-mm

– 8-pin PDIP 300-mil

-4-

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