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VIT2080C

Description
Dual Trench MOS Barrier Schottky Rectifier
File Size162KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Compare View All

VIT2080C Overview

Dual Trench MOS Barrier Schottky Rectifier

VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.52 V at I
F
= 5 A
FEATURES
Dual Trench MOS Barrier Schottky Rectifier
TMBS
TO-220AB
®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
1
VT2080C
PIN 1
PIN 3
PIN 2
CASE
3
1
VFT2080C
PIN 1
PIN 3
PIN 2
2
3
TYPICAL APPLICATIONS
TO-262AA
TO-263AB
K
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
2
1
1
VBT2080C
PIN 1
PIN 2
K
HEATSINK
2
3
VIT2080C
PIN 1
PIN 3
PIN 2
K
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A
T
J
max.
Package
Diode variations
2 x 10 A
80 V
100 A
0.60 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Common cathode
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
V
AC
T
J
, T
STG
VT2080C
VFT2080C VBT2080C
80
20
10
100
110
1.0
1500
-55 to +150
VIT2080C
UNIT
V
A
A
mJ
A
V
°C
Revision: 11-Sep-13
Document Number: 89166
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier
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