2MBI100NB-060 datasheet, PDF - EEWORLD Datasheet

2MBI100NB-060: DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size484KB，4 Pages; ManufacturerFuji Electric Co., Ltd.

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2MBI100NB-060 Overview

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code	unknow
Maximum collector current (IC)	100 A
Collector-emitter maximum voltage	600 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT
JESD-30 code	R-XUFM-X7
Number of components	2
Number of terminals	7
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Nominal off time (toff)	800 ns
Nominal on time (ton)	800 ns
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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