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VSKDU162-12PBF

Description
HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)
File Size591KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VSKDU162-12PBF Overview

HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules)

VSKDU162/12PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Diodes, 100 A
(New INT-A-PAK
TM
Power Modules)
FEATURES
• Electrically isolated: DBC base plate
• 3500 V
RMS
isolating voltage
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
New
INT-A-PAK
TM
RoHS
COMPLIANT
• UL E78996 approved
• Case style New INT-A-PAK
100 A
2.5 V
PRODUCT SUMMARY
I
F(AV)
V
FM
(typical) at I
C
= 100 A, 25 °C
• Totally lead (Pb)-free
• Designed and qualified for industrial level
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV) rect
t
rr
V
RRM
T
J
, T
Stg
CHARACTERISTICS
VALUES
100
T
C
88
200
1200
- 40 to 150
UNITS
A
°C
ns
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VSKDU162/12PbF
VOLTAGE
CODE
12
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1250
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Maximum forward voltage drop
SYMBOL
I
F(AV)
V
FM
t
rr
Q
rr
I
REC
dI
(rec)M
/dt
I
F
= 160 A, T
J
= 25 °C, - dI/dt = 200 A/µs, V
R
= 200 V
TEST CONDITIONS
Rectangular conduction, 50 % duty cycle
I
F
= 100 A, T
J
= 25 °C, t
p
= 400 µs square wave
I
F
= 160 A, T
J
= 25 °C, t
p
= 400 µs square wave
TYP.
-
-
2.5
2.9
150
2000
20
-
MAX.
100
88
3.2
3.9
200
2400
22
300
UNITS
A
°C
V
ns
nC
A
A/µs
Document Number: 94512
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1

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Description HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules) HEXFRED Ultrafast Diodes, 100 A (New INT-A-PAK Power Modules) HEXFRED® Ultrafast Diodes, 100 A (New INT-A-PAKTM Power Modules)
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