VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
MAGN-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
PRODUCT SUMMARY
I
T(AV)
170 A/250 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
DRM
/V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
85 °C
VSK.170..
170
377
5100
5350
131
119
1310
Up to 1600
- 40 to 130
VSK.250..
250
555
8500
8900
361
330
3610
Up to 2000
kA
2
s
kA
2
s
V
°C
A
UNITS
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
VSK.170-
10
12
14
16
04
08
10
VSK.250-
12
14
16
18
20
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
400
800
1000
1200
1400
1600
400
800
1000
1200
1400
1600
1800
2000
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
500
900
1100
1300
1500
1700
1900
2100
60
50
50
I
RRM
/I
DRM
AT 130 °C
MAXIMUM
mA
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
Maximum peak, one-cycle on-state
non-repetitive, surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
VSK.170
170
85
377
5100
5350
4300
4500
131
119
92.5
84.4
1310
0.89
1.12
1.34
0.96
1.60
500
1000
VSK.250
250
85
555
8500
8900
7150
7500
361
330
255
233
3610
0.97
1.00
0.60
0.57
1.44
500
1000
mA
V
m
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
I
TM
=
x I
T(AV)
, T
J
= T
J
maximum, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 12 V, resistive load = 1
,
gate pulse: 10 V, 100 μs, T
J
= 25 °C
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 170 A/250 A
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
t
d
t
r
t
q
TEST CONDITIONS
T
J
= 25 °C, gate current = 1 A dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
I
TM
= 300 A; dI/dt = 15 A/μs; T
J
= T
J
maximum;
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
VSK.170
VSK.250
UNITS
1.0
2.0
50 to 150
μs
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
SYMBOL
I
RRM,
I
DRM
V
INS
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
J
= T
J
maximum, exponential to 67 % rated V
DRM
VSK.170
50
3000
1000
VSK.250
60
UNITS
mA
V
V/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GT
V
GT
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
t
p
5 ms, T
J
= T
J
maximum
t
p
5 ms, T
J
= T
J
maximum
T
J
= - 40 °C
T
J
= 25 °C
T
J
= T
J
maximum
T
J
= - 40 °C
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
Maximum rate of rise of turned-on current
I
GT
V
GD
I
GD
dI/dt
T
J
= 25 °C
T
J
= T
J
maximum
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, I
TM
= 400 A,
rated V
DRM
applied
Anode supply = 12 V,
resistive load; Ra = 1
Anode supply = 12 V,
resistive load; Ra = 1
VSK.170
VSK.250
UNITS
W
A
10.0
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
10.0
500
V
mA
A/μs
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
Approximate weight
Case style
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
TEST CONDITIONS
VSK.170
VSK.250
UNITS
°C
- 40 to 130
0.17
0.02
0.125
K/W
0.02
4 to 6
Nm
500
17.8
MAGN-A-PAK
g
oz.
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
R
CONDUCTION PER JUNCTION
DEVICES
VSK.170-
VSK.250-
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
0.009
0.009
120°
0.010
0.010
90°
0.010
0.014
60°
0.020
0.020
30°
0.032
0.032
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.007
0.007
120°
0.011
0.011
90°
0.015
0.015
60°
0.020
0.020
30°
0.033
0.033
UNITS
K/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
120
110
100
90
80
70
60
0
40
VSK.170.. Series
R
thJC
(DC) = 0.17 K/W
Maximum Average On-state Power Loss (W)
130
300
250
200
150
100
50
0
0
40
80
120
160
200
Average On-state Current (A)
180°
120°
90°
60°
30°
Conduction Angle
RMS Limit
30°
Conduction Angle
60°
90°
120°
180°
80
120
160
200
VSK.170.. Series
Per Junction
T
J
= 125°C
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
120
110
100
90
30°
80
70
60
0
50
100
VSK.170.. Series
R
thJC
(DC) = 0.17 K/W
Maximum Average On-state Power Loss (W)
130
350
300
250
200
150
100
50
0
0
50
100
150
200
250
300
Average On-state Current (A)
Conduction Period
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
60°
90°
120°
180°
DC
250
300
VSK.170.. Series
Per Junction
T
J
= 125°C
150
200
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 170 A/250 A
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
5000
4500
4000
3500
3000
2500
2000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
5000
4500
4000
3500
3000
2500
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial T
J
= 130°C
No Voltage Reapplied
Rated V
RRM
Reapplied
VSK.170.. Series
Per Junction
VSK.170.. Series
Per Junction
0.1
Pulse Train Duration (s)
2000
0.01
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum Total On-state Power Loss (W)
400
350
180°
120°
90°
60°
30°
0.
25
0.
3
0.
2
K/
W
16
0.
W
K/
0.1
2
W
K/
R
th S
8
0. 0
W
K/
A
300
250
200
Conduction Angle
150
100
50
0
0
50
K/
W
K/
W
=0
.0 4
K/ W
0.3
5
-D
K/W
e lt
aR
VSK.170.. Series
Per Module
T
J
= 130°C
100 150 200 250 300 350 400
0
Total RMS Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1000
Maximum Total Power Loss (W)
SA
R
th
0.
900
800
700
600
500
400
300
200
100
0
0
50
100
150
200
250
300
0
350
2 x VSK.170.. Series
Single Phase Bridge
Connected
T
J
= 130°C
180°
(Sine)
180°
(Rect)
0.
1
0.1
04
0.
08
06
0.
W
K/
K/
W
K/
W
. 02
=0
W
K/
W
K/
0. 1
6
0 .2
2K
/W
-D
K/
W
e lt
a
K/ W
0. 2
5K
/W
0.35
K/ W
R
20
40
60
80
100
120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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