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VSSA36S-M3-5AT

Description
Surface Mount Trench MOS Barrier Schottky Rectifier
File Size78KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VSSA36S-M3-5AT Overview

Surface Mount Trench MOS Barrier Schottky Rectifier

New Product
VSSA36S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS
®
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Not recommended for PCB bottom side wave mounting
DO-214AC (SMA)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
3.0 A
60 V
60 A
0.48 V
150 °C
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 3.0 A
T
J
max.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
V
RRM
I
F (1)
I
F (2)
I
FSM
T
J
, T
STG
SYMBOL
VSSA36S
V36
60
3.0
A
2.4
60
- 55 to + 150
A
°C
V
UNIT
Document Number: 89345
Revision: 18-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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