SGA0163ZDC
to 4500MHz,
Silicon Germa-
nium Cascad-
able Gain
Block
SGA0163Z
DC to 4500MHz, SILICON GERMANIUM
CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
The SGA0163Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
Features
DCto4500MHz Operation
Single Voltage Supply
Low Current Draw: 8mA at
2.1V typ.
High Output Intercept:
10dBm Typ. at 1900MHz
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Applications
Small Signal Gain vs. Frequency
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
15
10
dB
5
0
0
1
2
3
4
5
6
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Frequency GHz
Parameter
Output Power at 1dB Compression
Min.
Specification
Typ.
-1.8
-1.8
-2.4
9.4
9.8
9.2
12.7
12.0
11.6
4500
1.6:1
1.3:1
17.6
18.1
18.3
4.6
Max.
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
DC to 4500MHz
DC to 4500MHz
850MHz
1950MHz
2400MHz
1950MHz
Condition
Third Order Intercept Point
Small Signal Gain
3dB Bandwidth
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure
[1]
Device Operating Voltage
2.1
V
Device Operating Current
6
8
10
mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: V
S
=5V, I
D
=8mA Typ., T
L
=25°C. OIP3 Tone Spacing=1MHz, P
OUT
per tone=-17dBm, R
BIAS
=360, Z
S
=Z
L
=50
dB
dB
dB
dB
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGA0163Z
Absolute Maximum Ratings
Parameter
Device Current (I
D
)
Device Voltage (V
D
)
RF Input Power
Junction Temp (T
J
)
Operating Temp Range (T
L
)
Storage Temp
Rating
16
6
-4
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Parameter
Gain
Min.
Specification
Typ.
12.9
12.8
12.7
12.0
11.6
10.6
9.4
9.5
9.4
9.8
9.2
9.3
Max.
Unit
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Condition
100MHz
500MHz
850MHz
1950MHz
2400MHz
3500MHz
100MHz, Tone spacing=1MHz, P
OUT
per tone=
-17dBm
500MHz, Tone spacing=1MHz, P
OUT
per tone=
-17dBm
850MHz, Tone spacing=1MHz, P
OUT
per tone=
-17dBm
1950MHz, Tone spacing=1MHz, P
OUT
per tone=
-17dBm
2400MHz, Tone spacing=1MHz, P
OUT
per tone=
-17dBm
3500MHz, Tone spacing=1MHz, P
OUT
per tone=
-17dBm
100MHz
500MHz
850MHz
1950MHz
2400MHz
3500MHz
100MHz
500MHz
850MHz
1950MHz
2400MHz
3500MHz
100MHz
500MHz
850MHz
1950MHz
2400MHz
3500MHz
100MHz, Z
S
=50
500MHz, Z
S
=50
850MHz, Z
S
=50
1950MHz, Z
S
=50
Output IP
3
Output P1dB
Input Return Loss
Reverse Isolation
Noise Figure
-1.5
-1.5
-1.8
-1.8
-2.5
-2.7
12.5
12.7
12.8
12.4
12.1
11.8
17.3
17.4
17.6
18.1
18.3
18.5
4.6
4.6
4.7
4.6
Test Conditions: I
D
=8mA, unless otherwise noted
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011
SGA0163Z
20
S21 vs. Temperature, I
D
= 8mA
25C
-40C
85C
0
S12 vs. Temperature, I
D
= 8mA
25C
-40C
85C
15
-10
dB
10
dB
-20
-30
0
1
2
3
4
5
6
0
1
2
3
4
5
6
5
0
GHz
GHz
0
-5
S11 vs. Temperature, I
D
= 8mA
25C
-40C
85C
0
S22 vs. Temperature, I
D
= 8mA
25C
-40C
85C
-10
dB
dB
0
1
2
3
4
5
6
-10
-15
-20
-25
-20
-30
-40
0
1
2
3
4
5
6
GHz
GHz
15
IP3 vs. Temperature, I
D
= 8mA
0
-2
P1dB vs. Temperature, I
D
= 8mA
dBm
10
dBm
5
25C
-40C
85C
0
1
2
3
4
-4
-6
-8
25C
-40C
85C
0
1
2
3
4
0
-10
GHz
GHz
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGA0163Z
Pin
3
1, 2,
4, 5
6
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-
ble.
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
Suggested Pad Layout
y
Preliminary
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
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DS111011
SGA0163Z
Application Schematic
Frequency (Mhz)
Reference
Designator
V
S
R
BIAS
1 uF
1000
pF
500
850
1950
2400
3500
C
B
C
D
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
L
C
RF in
C
B
3
SGA0163Z
6
4,5
C
B
1,2
Recommended Bias Resistor Values for I
D
=8mA
R
BIAS
=( V
S
-V
D
) / I
D
RF out
Supply Voltage(V
S
)
R
BIAS
5V
360
7.5 V
680
9V
820
12 V
1.2K
Note: R
BIAS
provides DC bias stability over temperature.
Evaluation Board Layout
V
S
R
BIAS
1 uF
1000 pF
C
D
L
C
G45
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
4, and 5 with many plated through-holes as shown.
C
B
C
B
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
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