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RAD7214-NCE

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric Compare View All

RAD7214-NCE Overview

Power Field-Effect Transistor

RAD7214-NCE Parametric

Parameter NameAttribute value
MakerCobham Semiconductor Solutions
package instruction,
Reach Compliance Codeunknown
Standard Products
RAD7214-NCx Power MOSFET Die
Data Sheet
January, 2012
www.aeroflex.com/MOSFETS
FEATURES
250Vbreakdown voltage
2.5 A current rating
1.2R
DS(on)
15nC gate charge
-55
o
C to +125
o
C temperature range
Operational Environment radiation testing to MIL-STD-
750
- Total-dose: 100 krads(Si)
- SEGR/SEB immune to Xe at full rated drain potential
Bare Die
- Prototype, EMs and Class S
Drop-in compatible with industry standards
Class S MOSFETs built to your custom flow
INTRODUCTION
Aeroflex RAD's new radiation tolerant power MOSFETs are
now available in die, seven standard package options and custom
packaging for HiRel environments. Applications within
military, aerospace, medical, nuclear power generation, high
energy physics research laboratories can benefit from the use of
this new series of MOSFETs. Aeroflex's Power MOSFETs are
radiation tolerant to 100 krad(Si) and SEGR/SEB immune to
their full rated breakdown potential.
Operational power losses are minimized by Aeroflex’s ideal
combination of low R
DS(on)
and gate charge. Die size is
optimized for maximum current rating while meeting industry
norms. These units are suitable for standalone and hybrid
applications.
The RAD7214-NCx Die are well suited for low loss switching
applications, such as DC-to-DC Converters and solid-state
relays. They are drop-in compatible with industry standards.
ELECTRICAL CHARACTERISTICS
(Case temperature (T
c
) = 25
o
C unless otherwise specified)
CHARACTERISTICS
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero-Gate Leakage
Drain Current
Drain-Source On Resistance
Gate Charge at 12V
Diode Forward Voltage
Junction-to-Case
BVdss
Vgs(th)
Igss
Idss1
Idss2
R
ds(on)
Qg(12)
Vsd
Rjc
Vgs - 0V, Id = 1mA
Vds = Vgs, Id = 1.0mA
Vgs = +20V
Vds = 200V, Vgs = 0V
Vds = 200V, Vgs = 0V, Tc
125
o
C
Vgs = 12V, Id = 2.0A
Vgs = 0V to 12V
Id = 2.5A, Vgs = 0V
NA/Die
Id = 2.5A
Vdd = 125V
250
2.0
-
-
-
-
-
0.6
-
LIMITS
TYP
-
-
-
-
-
-
-
-
-
MAX
-
4.0
100
25
250
1.2
15
1.8
-
o
UNITS
V
V
nA
A
ohms
nC
V
C/W

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