d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65162
S13-0461-Rev. B, 04-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR426DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs,
T
J
= 25 °C
I
S
= 4 A, V
GS
½0
V
0.77
23
19
14
9
T
C
= 25 °C
30
70
1.2
45
38
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.2
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
1160
185
70
20.5
9.3
3.1
2.5
0.8
18
15
18
10
9
9
18
8
1.6
35
30
35
20
18
18
35
16
ns
31
14
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
= 15 A
V
GS
½4.5
V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
30
0.0085
0.0104
43
0.0105
0.0125
1.2
40
47
- 5.4
2.5
± 100
1
5
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 65162
S13-0461-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR426DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10
V
thru 3
V
I
D
- Drain Current (A)
10
56
I
D
- Drain Current (A)
8
42
6
T
C
= 125 °C
4
T
C
= 25 °C
2
T
C
= - 55 °C
28
14
V
GS
= 2
V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.015
Transfer Characteristics
1500
C
iss
0.013
1200
C - Capacitance (pF)
V
GS
= 4.5
V
R
DS(on)
- On-Resistance (Ω)
0.011
900
0.009
V
GS
= 10
V
0.007
600
C
oss
300
C
rss
0.005
0
14
28
42
56
70
0
0
8
16
24
32
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
Capacitance
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
6
V
DS
= 20
V
4
V
DS
= 30
V
I
D
= 15 A
1.7
V
GS
= 4.5
V
V
GS
= 10
V
1.4
1.1
2
0.8
0
0.0
4.4
8.8
13.2
17.6
22.0
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65162
S13-0461-Rev. B, 04-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR426DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.060
I
D
= 15 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
0.048
T
J
= 25 °C
1
0.036
0.1
0.024
T
J
= 125 °C
0.012
T
J
= 25 °C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
I
D
= 250
µA
0.2
V
GS(th)
Variance
(V)
120
On-Resistance vs. Gate-to-Source Voltage
150
Power (W)
- 0.1
I
D
= 5 mA
- 0.4
90
60
- 0.7
30
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS
10 s
DC
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 65162
S13-0461-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR426DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
55
44
I
D
- Drain Current (A)
33
Package Limited
22
11
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
50
2.20
40
1.76
Power (W)
Power (W)
0
25
50
75
100
125
150
30
1.32
20
0.88
10
0.44
0
0.00
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65162
S13-0461-Rev. B, 04-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
京公网安备 11010802033920号
EEWORLD
