- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
V
DD
: 3.0Vto 3.6V
Standard Microcircuit Drawing 5962-01517
PRODUCT DESCRIPTION
The UT28F256LV amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened, 32K x 8
programmable memory device. The UT28F256LV PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the
UT28F256LV. The combination of radiation-hardness, fast
access time, and low power consumption make the UT28F256LV
ideal for high speed systems designed for operation in radiation
environments.
A(14:0)
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
CE
PE
OE
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
Figure 1. PROM Block Diagram
2
DEVICE OPERATION
The UT28F256LV has three control inputs: Chip Enable (CE),
Program Enable (PE), and Output Enable (OE); fifteen address
inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE
is the device enable input that controls chip selection, active, and
standby modes. Asserting CE causes I
DD
to rise to its active value
and decodes the fifteen address inputs to select one of 32,768
words in the memory. PE controls program and read operations.
During a read cycle, OE must be asserted to enable the outputs.
PIN CONFIGURATION
PIN NAMES
A(14:0)
CE
OE
PE
DQ(7:0)
Address
Chip Enable
Output Enable
Program Enable
Data Input/Data Output
Table 1. Device Operation Truth Table
1
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
PE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
OE
X
0
1
1
PE
1
1
0
1
CE
1
0
0
0
I/O MODE
Three-state
Data Out
Data In
Three-state
MODE
Standby
Read
Program
Read
2
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
Thermal resistance, junction-to-case
2
DC input current
LIMITS
-0.3 to 7.0
-0.5 to (V
DD
+ 0.5)
-65 to +150
1.5
+175
3.3
UNITS
V
V
°C
W
°C
°C/W
mA
±
10
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2. Test per MIL-STD-883, Method 1012, infinite heat sink.
3
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
T
C
V
IN
PARAMETER
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
3.0 to 3.6
-55 to +125
0 to V
DD
UNITS
V
°C
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 3.0V to 3.6V; -55°C < T
C
< +125°C)
SYMBOL
V
IH
V
IL
V
OL1
V
OL2
V
OH1
V
OH2
C
IN 1
C
IO 1, 4
I
IN
I
OZ
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
I
OL
= 100µA, V
DD
= 3.0V
I
OL
= 1.0mA, V
DD
= 3.0V
I
OH
= -100µA, V
DD
= 3.0V
I
OH
= -1.0mA, V
DD
= 3.0V
ƒ
= 1MHz, V
DD
= 3.3V
V
IN
= 0V
ƒ
= 1MHz, V
DD
= 3.3V
V
OUT
= 0V
V
IN
= 0V to V
DD
V
O
= 0V to V
DD
V
DD
= 3.6V
OE = 3.6V
V
DD
= 3.6V, V
O
= V
DD
V
DD
= 3.6V, V
O
= 0V
CMOS input levels (I
OUT
= 0), V
IL
=
0.2V
V
DD
, PE = 3.6V, V
IH
= 3.0V
CMOS input levels V
IL
= V
SS
+0.25V
CE = V
DD
- 0.25 V
IH
= V
DD
- 0.25V
-3
-8
V
DD
-0.15
V
DD
-0.3
15
CONDITION
MINIMUM
0.7V
DD
0.25V
DD
V
SS
+ 0.05
V
SS
+ 0.10
MAXIMUM
UNIT
V
V
V
V
V
V
pF
Bidirectional I/O capacitance
15
pF
µA
µA
Input leakage current
Three-state output leakage
current
3
8
I
OS 2,3
I
DD1
(OP)
5
Short-circuit output current
90
-90
mA
mA
Supply current operating
@15.4MHz (65ns product)
50.0
1.0
mA
mA
I
DD2
(SB)
post-rad
Supply current standby
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 1.5mA/MHz.
4
READ CYCLE
A combination of PE greater than V
IH
(min), and CE less than
V
IL
(max) defines a read cycle. Read access time is measured
from the latter of device enable, output enable, or valid address
to valid data output.
An address access read is initiated by a change in address inputs
while the chip is enabled with OE asserted and PE deasserted.
Valid data appears on data output, DQ(7:0), after the specified
t
AVQV
is satisfied. Outputs remain active throughout the entire
cycle. As long as device enable and output enable are active, the
address inputs may change at a rate equal to the minimum read
cycle time.
AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(V
DD
= 3.0V to 3.6V; -55°C < T
C
< +125°C)
SYMBOL
t
AVAV1
t
AVQV
t
AXQX2
t
GLQX2
t
GLQV
t
GHQZ
t
ELQX2
t
ELQV
t
EHQZ
PARAMETER
Read cycle time
Read access time
Output hold time
OE-controlled output enable time
OE-controlled access time
OE-controlled output three-state time
CE-controlled output enable time
CE-controlled access time
CE-controlled output three-state time
The chip enable-controlled access is initiated by CE going active
while OE remains asserted, PE remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
t
ELQV
is satisfied, the eight-bit word addressed by A(14:0)
appears at the data outputs DQ(7:0).
Output enable-controlled access is initiated by OE going active
while CE is asserted, PE is deasserted, and the addresses are
stable. Read access time is t
GLQV
unless t
AVQV
or t
ELQV
have
not been satisfied.
28F256LV-65
MIN
MAX
65
65
0
0
35
35
0
65
35
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rads(Si).
1. Functional test.
2. Three-state is defined as a 400mV change from steady-state output voltage.
I was browsing the community recently and came across the Microchip Engineer Community (www.microchip.com.cn/community).Here you can learn the latest product information, read complete Chinese technic...
[i=s] This post was last edited by dontium on 2015-1-23 13:13 [/i] The amplifier is prone to self-oscillation during production, which is a headache for students. I uploaded a document to share and le...
[i=s] This post was last edited by Feihong Haojie on 2016-7-24 21:48 [/i] [size=4] I am considering using TL07x, and I wonder if anyone has any other recommendations [/size]...
In early 2002, I started to write a working program for an IC card prepaid electricity meter. The meter used Philips' 8-bit 51-expanded single-chip microcomputer
87LPC764
, and wa...[Details]
The Portable Digital Data Acquisition System (PDDAS) uses LabVIEW Real-Time and PXI to control the wind tunnel test and record air pressure data from 128 different channels.
"The LabVIEW Real-...[Details]
0 Introduction
With the development of society, people pay more and more attention to security work. Monitoring products have been used in various fields instead of being used only in importan...[Details]
1. Introduction
With the gradual automation and modernization of industrial control systems, fieldbus control systems have received more and more attention and application. CAN bus is currentl...[Details]
In the previous series, we have listed some basic knowledge of C language in Tables 1 to 3. We hope that beginners can strengthen their memory of the above tables and gradually learn to use them wh...[Details]
1. Background:
The instrument system parameter detection and control of the chemical production workshop of Tangshan Coal Gas Coking Plant are all analog instruments, some of which are eve...[Details]
Product series: PB-B-RS232/485 interface (hereinafter sometimes referred to as "interface") is a product in the PROFIBUS bus bridge series.
The main purpose of the bridge series ...[Details]
1 Introduction
The Third Steel Plant of Jigang Group is a key investment project of Jigang Group during the "15th Five-Year Plan". It has introduced first-class domestic and foreign advanced eq...[Details]
Currently, each country is developing its own USB interface
charging specifications
, which leads to a major problem that a USB interface
charging
device manufactured in one country...[Details]
Analysis of the three core aspects of digital TV transmission standards
According to the differences in regionality, transmission method and modulation method, the transmission method needs to...[Details]
store
To prevent moisture, LEDs should be stored in a dry and ventilated environment with a storage temperature of -40°C to +100°C and a relative humidity below 85%.
The LED should be use...[Details]
The emergence and development of street lamps are inseparable from the prosperity and progress of cities, which makes street lamps useful. Conversely, street lamps also make the night of the city n...[Details]
Dual Tone MultiFrequency (DTMF) signaling is gradually being used in push-button telephones around the world. It quickly replaced the dial pulse signaling used in traditional rotary phones because ...[Details]
When developing electronic products with processors, how to improve anti-interference ability and electromagnetic compatibility?
1. The following systems should pay special attention to anti-...[Details]
introduction
Sudan's Muglad Oilfield is a large oilfield jointly invested, developed and constructed by a four-party consortium of China, Malaysia, Canada and Sudan. It consists of 8 satellite...[Details]
Microchip MCU
京公网安备 11010802033920号
EEWORLD
