d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S15-0071-Rev. D, 19-Jan-15
Document Number: 67056
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA444DJT
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 8.8 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 8.8 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.7
Ω
I
D
≅
8.8 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.7
Ω
I
D
≅
8.8 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 11 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 11 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.4 A
V
GS
= 4.5 V, I
D
= 6.5 A
V
DS
= 10 V, I
D
= 7.4 A
MIN.
30
-
-
1
-
-
-
20
-
-
-
-
-
-
-
-
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
34
-4.8
-
-
-
-
-
0.014
0.017
24
560
125
55
10
5
1.5
1.7
3.5
12
12
15
10
7
12
15
10
-
-
0.8
15
6
7.5
7.5
MAX.
-
-
-
2.2
± 100
1
10
-
0.017
0.022
-
-
-
-
15
8
-
-
7
20
20
25
15
15
20
25
15
12
40
1.2
30
12
-
-
ns
Ω
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
Ω
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0071-Rev. D, 19-Jan-15
Document Number: 67056
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA444DJT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
10
Vishay Siliconix
32
I
D
- Drain Current (A)
V
GS
= 10 V thru 4 V
I
D
- Drain Current (A)
8
24
V
GS
= 3 V
16
6
T
C
= 25
°C
4
8
V
GS
= 2 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
T
C
= 125
°C
0
0
0.0
0.5
T
C
= - 55
°C
1.0
1.5
2.0
2.5
V
GS
-
Gate-to-Source
Voltage (V)
3.0
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
800
0.024
R
DS(on)
- On-Resistance (Ω)
600
0.018
V
GS
= 4.5 V
C - Capacitance (pF)
C
iss
400
0.012
V
GS
= 10 V
200
0.006
C
rss
0.000
0
8
16
24
I
D
- Drain Current (A)
32
40
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
C
oss
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
1.8
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 11 A
8
V
DS
= 15 V
V
DS
= 7.5 V
6
V
DS
= 24 V
4
1.6
I
D
= 7.4 A
V
GS
= 10 V
1.4
V
GS
= 4.5 V
1.2
1.0
2
0.8
0
0
2
4
6
8
Q
g
- Total
Gate
Charge (nC)
10
12
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-0071-Rev. D, 19-Jan-15
On-Resistance vs. Junction Temperature
Document Number: 67056
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA444DJT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
I
D
= 7.4 A
0.04
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
Vishay Siliconix
T
J
= 150
°C
T
J
= 25
°C
0.03
T
J
= 150
°C
0.02
T
J
= 25
°C
1
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.9
1.8
1.7
1.6
30
25
20
Power (W)
I
D
= 250 μA
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
V
GS(th)
(V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
- 50
15
10
5
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power (Junction-to-Ambient)
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single
Pulse
BVDSS Limited
1
s,
10
s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-0071-Rev. D, 19-Jan-15
Document Number: 67056
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA444DJT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
20
Vishay Siliconix
25
Power Dissipation (W)
15
I
D
- Drain Current (A)
20
15
Package Limited
10
10
5
5
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0071-Rev. D, 19-Jan-15
Document Number: 67056
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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