APM4416
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/8A , R
DS(ON)
=15mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=22mΩ(typ.) @ V
GS
=4.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Pin Description
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
Top View
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G
D
Ordering and Marking Information
APM 4416
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
S
N-Channel MOSFET
P ackage C ode
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
A P M 4416 K :
A P M 4416
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
8
32
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
1
www.anpec.com.tw
* Surface Mounted on FR4 Board, t
≤
10 sec.
APM4416
Absolute Maximum Ratings Cont.
Symbol
P
D
Parameter
Maximum Power Dissipation
T
A
=25°C
T
A
=100°C
T
J
T
STG
R
θjA
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
(T
A
= 25°C unless otherwise noted)
Rating
2.5
1.0
150
-55 to 150
50
W
°C
°C
°C/W
Unit
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
SD
a
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
APM4416
Min.
Typ.
Max.
Test Condition
Unit
V
GS
=0V , I
DS
=250µA
V
DS
=24V , V
GS
=0V
V
DS
=24V, V
GS
=0V, T
j
= 55°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V , V
DS
=0V
V
GS
=10V , I
DS
=4A
V
GS
=4.5V , I
DS
=2A
I
SD
=2A , V
GS
=0V
V
DS
=15V , I
DS
= 10A
V
GS
=5V
30
1
5
1
15
22
0.6
15
5.8
3.8
11
18
26
54
30
3
±100
18
30
1.3
20
V
µA
V
nA
mΩ
V
Dynamic
b
Q
g
Total Gate Charge
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
nC
V
DD
=15V , I
DS
=2A ,
V
GEN
=10V , R
G
=6Ω
V
GS
=0V
V
DS
=15V
17
37
20
1150
230
100
ns
pF
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
2
www.anpec.com.tw
APM4416
Typical Characteristics
Output Characteristics
30
40
Transfer Characteristics
V
GS
=5,6,7,8,9,10V
25
I
DS
-Drain Current (A)
I
DS
-Drain Current (A)
30
20
V
GS
=4V
15
20
T
J
=25°C
10
V
GS
=3.5V
V
GS
=3V
10
T
J
=125°C
T
J
=-55°C
5
0
0
2
4
6
8
10
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
-Drain-to-Source Voltage (V)
V
GS
-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
On-Resistance vs. Drain Current
0.040
V
GS(th)
-Threshold Voltage (V)
(Normalized)
I
DS
=250µA
1.0
R
DS(ON)
-On-Resistance (Ω)
0.035
0.030
V
GS
=4.5V
0.025
0.020
0.8
V
GS
=10V
0.015
0.010
0.005
0.6
0.4
-50
-25
0
25
50
75
100
125
150
0.000
0
5
10
15
20
25
30
T
j
-Junction Temperature (°C)
I
DS
-Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
3
www.anpec.com.tw
APM4416
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
0.045
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On Resistance (Ω) (Normalized)
1.6
I
DS
=4A
R
DS (ON)
-On-Resistance (Ω)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
3
4
5
6
7
8
9
10
V
GS
=10V
I
DS
=4A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
Gate Voltage (V)
T
j
-Junction Temperature (°C)
Gate Charge
10
2000
Capacitance Characteristics
V
GS
-Gate-to-Source Voltage (V)
V
DS
=15V
I
DS
=10A
C-Capacitance (pF)
8
1000
Ciss
500
6
Coss
4
2
100
Crss
Frequency=1MHz
0
0
5
10
15
20
25
30
0.1
1
10
30
Q
G
-Total Gate Charge (nC)
V
DS
-Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
4
www.anpec.com.tw
APM4416
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
100
Single Pulse Power
60
50
I
SD
-Source Current (A)
10
40
Power (W)
1.2
1.4
30
1
T
J
=125°C
T
J
=-55°C
20
T
J
=25°C
0.1
0.0
10
0
0.2
0.4
0.6
0.8
1.0
10
-2
10
-1
10
0
10
1
10
2
V
SD
-Source to Drain Voltage
Time (sec)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50°C/W
3. T
JM
-T
A
=P
DM
Z
thJA
4. Surface Mounted
-3
-2
-1
0
1
2
D=0.02
SINGLE PULSE
0.01
-4
10
10
10
10
10
10
10
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
5
www.anpec.com.tw
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