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SI7460DP_09

Description
11 A, 60 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size335KB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI7460DP_09 Overview

11 A, 60 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET

SI7460DP_09 Parametric

Parameter NameAttribute value
Number of terminals5
Minimum breakdown voltage60 V
Processing package descriptionROHS COMPLIANT, POWERPAK, SOP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsUNSPECIFIED
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current11 A
Rated avalanche energy125 mJ
Maximum drain on-resistance0.0096 ohm
Maximum leakage current pulse40 A
Si7460DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
(Ω)
0.0096 at V
GS
= 10 V
0.012 at V
GS
= 4.5 V
I
D
(A)
18
16
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
PowerPAK SO-8
6.15 mm
S
1
2
3
S
S
5.15 mm
G
4
D
D
8
7
6
5
D
D
D
G
Bottom View
Ordering Information:
Si7460DP-T1-E3 (Lead (Pb)-free)
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b,c
a
Symbol
V
DS
V
GS
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
I
S
I
AS
E
AS
T
A
= 25 °C
T
A
= 70 °C
P
D
T
J
, T
stg
10 s
Steady State
60
± 20
Unit
V
18
14
40
4.3
50
125
5.4
3.4
- 55 to 150
260
11
8
A
1.6
mJ
1.9
1.2
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
1

SI7460DP_09 Related Products

SI7460DP_09 SI7460DP
Description 11 A, 60 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET 11 A, 60 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 5 5
Minimum breakdown voltage 60 V 60 V
Processing package description ROHS COMPLIANT, POWERPAK, SOP-8 ROHS COMPLIANT, POWERPAK, SOP-8
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form C BEND C BEND
terminal coating MATTE TIN MATTE TIN
Terminal location DUAL DUAL
Packaging Materials UNSPECIFIED UNSPECIFIED
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Channel type N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 11 A 11 A
Rated avalanche energy 125 mJ 125 mJ
Maximum drain on-resistance 0.0096 ohm 0.0096 ohm
Maximum leakage current pulse 40 A 40 A

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