APM7316
Dual N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
20V/6A , R
DS(ON)
=25mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=40mΩ(typ.) @ V
GS
=2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Pin Description
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
SO-8
D1
D1
D2
D2
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G1
G2
S1
S2
Ordering and Marking Information
APM7316
Handling Code
Temp. Range
Package Code
N-Channel MOSFET
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TR : Tape & Reel
APM7316 K :
APM7316
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
20
±16
6
20
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
1
www.anpec.com.tw
APM7316
Absolute Maximum Ratings (Cont.)
Symbol
P
D
T
J
T
STG
R
θjA
Parameter
T
A
=25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
T
A
=100°C
(T
A
= 25°C unless otherwise noted)
Rating
2.5
W
1
150
-55 to 150
50
°C
°C
°C/W
Unit
* Surface Mounted on FR4 Board, t
≤
10 sec.
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
SD
a
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
APM7316
Min.
Typ.
Max.
Test Condition
Unit
V
GS
=0V , I
DS
=250
µ
A
V
DS
=18V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=
±
16V , V
DS
=0V
V
GS
=4.5V , I
DS
=6A
V
GS
=2.5V , I
DS
=2A
I
SD
=2.3A , V
GS
=0V
V
DS
=10V , I
DS
= 1A
V
GS
=4.5V ,
20
1
0.5
0.7
25
40
0.7
9.5
2.6
2.5
16
1.0
±
100
35
50
1.1
12
V
µ
A
V
nA
m
Ω
V
Dynamic
b
Q
g
Total Gate Charge
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
nC
32
74
78
35
ns
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=0.2
Ω
V
GS
=0V
Output Capacitance
V
DS
=15V
Reverse Transfer Capacitance Frequency=1.0MHz
40
42
18
675
178
105
pF
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
2
www.anpec.com.tw
APM7316
Typical Characteristics
Output Characteristics
20
V
GS
=3,4,5,6,7,8,9,10V
2.5V
Transfer Characteristics
20
I
D
-Drain Current (A)
I
D-
Drain Current (A)
16
16
12
12
8
2V
8
T
J
=125°C
T
J
=-55°C
4
1.5V
4
T
J
=25°C
0
0
1
2
3
4
5
6
7
8
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
I
DS
=250uA
On-Resistance vs. Drain Current
0.07
V
GS(th)-
Threshold Voltage (V)
(Normalized)
R
DS(ON)
-On-Resistance (Ω)
1.25
1.00
0.75
0.50
0.25
0.00
-50
0.06
0.05
V
GS
=2.5V
0.04
0.03
0.02
0.01
V
GS
=4.5V
-25
0
25
50
75
100 125 150
0.00
0
2
4
6
8
10
Tj - Junction Temperature (°C)
I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
3
www.anpec.com.tw
APM7316
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.09
I
D
=6A
On-Resistance vs. Junction Temperature
2.00
V
GS
=4.5V
I
D
=6A
R
DS(ON)
-On-Resistance (Ω)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1
2
3
4
5
6
7
8
9
10
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
100 125 150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
10
1000
V
DS
=10V
I
D
=1A
Capacitance
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
8
800
6
Capacitance (pF)
Ciss
600
4
400
Coss
Crss
2
200
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
4
www.anpec.com.tw
APM7316
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20
10
60
Single Pulse Power
I
S
-Source Current (A)
48
Power (W)
1.2
1.4
36
1
T
J
=150°C
T
J
=25°C
24
12
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
0.01
0.1
1
10
100
V
SD
-Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50°C/W
3.T
JM
-T
A
=P
DM
Z
thJA
4.Surface Mounted
0.01
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
5
www.anpec.com.tw
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