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MBR2035CTP

Description
10 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size134KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

MBR2035CTP Overview

10 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA

VS-MBRB20..CTPbF, VS-MBR20..CT-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
VS-MBRB20..CTPbF
VS-MBR20..CT-1PbF
FEATURES
• 150 °C T
J
operation
• Center tap D
2
PAK and TO-262 packages
• Low forward voltage drop
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
2
1 Common
3
cathode Anode
Anode
2
1 Common
3
Anode cathode Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
D
2
PAK
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 10 A
35 V/45 V
15 mA at 125 °C
DESCRIPTION
This center tap Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
10 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 135 °C (per leg)
VALUES
20
A
20
35/45
1060
0.57
- 65 to 150
V
A
V
°C
UNITS
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB2035CTPbF
VS-MBR2035CT-1PbF
35
VS-MBRB2045CTPbF
VS-MBR2045CT-1PbF
45
UNITS
V
Document Number: 94305
Revision: 16-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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