TIP30C datasheet, PDF - EEWORLD Datasheet

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TIP30C: Description1 A, PNP, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size38KB，3 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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TIP30C Overview

1 A, PNP, Si, POWER TRANSISTOR, TO-220AB

TIP30C Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	1 A
Processing package description	TO-220, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	DARLINGTON
Shell connection	COLLECTOR
Number of components	1
Transistor component materials	SILICON
Maximum ambient power consumption	30 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	15
Rated crossover frequency	3 MHz

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Product Specification

Silicon PNP Power Transistors

TIP30/30A/30B/30C

DESCRIPTION

・With

TO-220C package

・Complement

to type TIP29/29A/29B/29C

APPLICATIONS

・For

use in general purpose power amplifer

and switching applications

PINNING

Emitter

Collector;connected to

mounting base

Base

DESCRIPTION

・

Absolute maximum ratings(Ta=25

℃

)

SYMBOL

PARAMETER

TIP30

TIP30A

CBO

Collector-base voltage

TIP30B

TIP30C

TIP30

TIP30A

CEO

Collector-emitter voltage

TIP30B

TIP30C

EBO

stg

Emitter-base voltage

Collector current (DC)

Collector current-Pulse

Base current

Collector power dissipation

Junction temperature

Storage temperature

=25℃

Open collector

Open base

-80

-100

-5

-1

-3

-0.4

150

-65~150

℃

Open emitter

-80

-100

-40

-60

CONDITIONS

VALUE

-40

-60

UNIT

TIP30C Related Products

	TIP30C	TIP30A	TIP30B
Description	1 A, PNP, Si, POWER TRANSISTOR, TO-220AB	POWER TRANSISTOR	1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
state	ACTIVE	ACTIVE	Active
Number of terminals	3	-	3
Maximum collector current	1 A	-	1 A
Processing package description	TO-220, 3 PIN	-	TO-220, 3 PIN
packaging shape	RECTANGULAR	-	RECTANGULAR
Package Size	FLANGE MOUNT	-	FLANGE MOUNT
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE
Packaging Materials	PLASTIC/EPOXY	-	PLASTIC/EPOXY
structure	DARLINGTON	-	SINGLE
Number of components	1	-	1
Transistor component materials	SILICON	-	SILICON
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	-
Minimum DC amplification factor	15	-	15
Rated crossover frequency	3 MHz	-	3 MHz

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