Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
TIP30/30A/30B/30C
DESCRIPTION
・With
TO-220C package
・Complement
to type TIP29/29A/29B/29C
APPLICATIONS
・For
use in general purpose power amplifer
and switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
PARAMETER
TIP30
TIP30A
V
CBO
Collector-base voltage
TIP30B
TIP30C
TIP30
TIP30A
V
CEO
Collector-emitter voltage
TIP30B
TIP30C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current (DC)
Collector current-Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-80
-100
-5
-1
-3
-0.4
30
150
-65~150
V
A
A
A
w
℃
℃
Open emitter
-80
-100
-40
-60
V
CONDITIONS
VALUE
-40
-60
V
UNIT
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
TIP30
TIP30A
I
C
=-30mA; I
B
=0
TIP30B
TIP30C
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
TIP30
TIP30A
TIP30B
TIP30C
TIP30/30A
TIP30B/30C
I
C
=-1A ;I
B
=-0.125A
I
C
=-1A ; V
CE
=-4V
V
CE
=-40V; V
EB
=0
V
CE
=-60V; V
EB
=0
CONDITIONS
TIP30/30A/30B/30C
MIN
-40
-60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
-80
-100
-0.7
-1.3
V
V
I
CES
Collector
cut-off current
-0.2
V
CE
=-80V; V
EB
=0
V
CE
=-100V; V
EB
=0
V
CE
=-30V; I
B
=0
-0.3
V
CE
=-60V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-0.2A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-4V
I
C
=-0.2A ; V
CE
=-10V;f=1MHz
40
15
3
75
-1.0
mA
I
CEO
Collector
cut-off current
mA
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transiton frequency
mA
MHz
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.167
UNIT
℃/W
2
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