IRLIZ34G_09 datasheet, PDF - EEWORLD Datasheet

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IRLIZ34G_09: DescriptionPower MOSFET; File Size2MB，8 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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IRLIZ34G_09 Overview

Power MOSFET

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IRLIZ34G, SiHLIZ34G

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

= 5.0 V

7.1

Single

0.050

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV

RMS

(t = 60 s;

f = 60 Hz)

• Sink to Lead Creepage Distance 4.8 mm

• Logic-Level Gate Drive

• R

DS(on)

Specified at V

= 4 V and 5 V

• Fast Switching

• Ease of paralleling

• Lead (Pb)-free

Available

RoHS*

COMPLIANT

TO-220 FULLPAK

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

G D S

N-Channel

MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

TO-220 FULLPAK

IRLIZ34GPbF

SiHLIZ34G-E3

IRLIZ34G

SiHLIZ34G

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

Current

at 5.0 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

LIMIT

± 10

0.28

200

4.5

- 55 to + 175

300

1.1

UNIT

W/°C

V/ns

°C

lbf · in

N·m

= 25 °C

for 10 s

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 583 µH, R

= 25

Ω,

= 20 A (see fig. 12c).

c. I

≤

30 A, dI/dt

≤

200 A/µs, V

≤

, T

≤

175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91317

S09-0037-Rev. A, 19-Jan-09

www.vishay.com

IRLIZ34G_09 Related Products

	IRLIZ34G_09	SIHLIZ34G	SIHLIZ34G-E3
Description	Power MOSFET	Power MOSFET	Power MOSFET
Is it lead-free?	-	Contains lead	Lead free
Is it Rohs certified?	-	incompatible	conform to
Maker	-	Vishay	Vishay
Parts packaging code	-	TO-220AB	TO-220AB
package instruction	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	-	3	3
Reach Compliance Code	-	unknow	unknow
ECCN code	-	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	-	200 mJ	200 mJ
Shell connection	-	ISOLATED	ISOLATED
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	60 V	60 V
Maximum drain current (Abs) (ID)	-	20 A	20 A
Maximum drain current (ID)	-	20 A	20 A
Maximum drain-source on-resistance	-	0.05 Ω	0.05 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-220AB	TO-220AB
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3
JESD-609 code	-	e0	e3
Number of components	-	1	1
Number of terminals	-	3	3
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	175 °C	175 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	-	42 W	42 W
Maximum pulsed drain current (IDM)	-	80 A	80 A
Certification status	-	Not Qualified	Not Qualified
surface mount	-	NO	NO
Terminal surface	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON

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