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SIHLIZ34G-E3

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size2MB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SIHLIZ34G-E3 Overview

Power MOSFET

SIHLIZ34G-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)42 W
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRLIZ34G, SiHLIZ34G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5.0 V
35
7.1
25
Single
60
0.050
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance 4.8 mm
• Logic-Level Gate Drive
• R
DS(on)
Specified at V
GS
= 4 V and 5 V
• Fast Switching
• Ease of paralleling
• Lead (Pb)-free
Available
RoHS*
COMPLIANT
TO-220 FULLPAK
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
G
G D S
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRLIZ34GPbF
SiHLIZ34G-E3
IRLIZ34G
SiHLIZ34G
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at 5.0 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
dV/dt
T
J
, T
stg
LIMIT
60
± 10
20
14
80
0.28
200
42
4.5
- 55 to + 175
300
d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 583 µH, R
G
= 25
Ω,
I
AS
= 20 A (see fig. 12c).
c. I
SD
30 A, dI/dt
200 A/µs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91317
S09-0037-Rev. A, 19-Jan-09
www.vishay.com
1

SIHLIZ34G-E3 Related Products

SIHLIZ34G-E3 IRLIZ34G_09 SIHLIZ34G
Description Power MOSFET Power MOSFET Power MOSFET
Is it lead-free? Lead free - Contains lead
Is it Rohs certified? conform to - incompatible
Maker Vishay - Vishay
Parts packaging code TO-220AB - TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3
Reach Compliance Code unknow - unknow
ECCN code EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 200 mJ - 200 mJ
Shell connection ISOLATED - ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V - 60 V
Maximum drain current (Abs) (ID) 20 A - 20 A
Maximum drain current (ID) 20 A - 20 A
Maximum drain-source on-resistance 0.05 Ω - 0.05 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB - TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3
JESD-609 code e3 - e0
Number of components 1 - 1
Number of terminals 3 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 42 W - 42 W
Maximum pulsed drain current (IDM) 80 A - 80 A
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal surface Matte Tin (Sn) - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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