INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
MJE15033
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -250V(Min)
·DC
current gain -
: h
FE
= 50 (Min) @I
C
= -0.5 A
: h
FE
= 10 (Min) @I
C
= -2.0 A
·Complement
to Type MJE15032
APPLICATIONS
·Designed
for use as high–frequency drivers in audio
amplifiers
.
ABSOLUTE MAXIMUM RATINGS (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@T
a
=25℃
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-250
-250
-5
-8
-16
-2
2
UNIT
V
V
V
A
A
A
P
C
W
50
150
-65~150
℃
℃
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
2.5
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
V
BE(
on
)
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
CONDITIONS
I
C
= -10mA ;I
B
= 0
B
MJE15033
MIN
-250
MAX
UNIT
V
I
C
= -1A ;I
B
= -0.1A
I
C
= -1A ; V
CE
= -5V
V
CB
= -150V; I
E
= 0
V
EB
= -5V; I
C
= 0
I
C
= -0.5A ; V
CE
= -5V
I
C
= -1A ; V
CE
= -5V
I
C
= -2A ; V
CE
= -5V
I
C
= -0.5A; V
CE
= -10V; f
test
= 1.0MHz
50
50
10
30
-0.5
-1.0
-10
-10
V
V
μA
μA
MHz
isc Website：www.iscsemi.cn
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