IRFZ20, SiHFZ20
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
17
9.0
3.0
Single
50
0.10
FEATURES
•
•
•
•
•
•
•
•
Extremely Low R
DS(on)
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Parts Per Million Quality
Compliant to RoHS Directive 2002/95/EC
D
TO-220AB
DESCRIPTION
The technology has expanded its product base to serve the
low voltage, very low R
DS(on)
MOSFET transistor
requirements.
Vishay’s highly efficient geometry and
unique processing have been combined to create the lowest
on resistance per device performance. In addition to this
feature all have documented reliability and parts per million
quality!
The transistor also offer all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that
are operated from low voltage batteries, such as
automotive, portable equipment, etc.
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRFZ20PbF
SiHFZ20-E3
IRFZ20
SiHFZ20
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
a
Gate-Source Voltage
a
Continuous Drain Current
Pulsed Drain
Single Pulse Avalanche Energy
c
Linear Derating Factor (see fig. 16)
Maximum Power Dissipation (see fig. 16)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
b
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
T
C
= 25 °C
for 10 s
P
D
T
J
, T
stg
LIMIT
50
± 20
15
10
60
5
0.32
40
- 55 to + 150
300 (0.063" (1.6 mm) from case
UNIT
V
A
mJ
W/°C
W
°C
Notes
a. T
J
= 25 °C to 150 °C
b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).
c. Starting T
J
= 25 °C, L = 0.07 mH, R
g
= 25
,
I
AS
= 12 A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
1
IRFZ20, SiHFZ20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Typical Socket Mount, Junction-to-Ambient
Case-to-Sink, Mounting Surface Flat, Smooth, and Greased
Junction-to-Case
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
1.0
-
MAX.
80
-
3.12
°C/W
UNIT
ELECTRICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
b
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction rectifier
D
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
> Max. Rating, V
GS
= 0 V
V
DS
= Max. Rating x 0.8, V
GS
= 0 V,
T
C
= 125 °C
V
GS
= 10 V
V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)
max.
I
D
= 10 A
MIN.
50
2.0
-
-
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
0.080
6.0
560
250
60
12
9.0
3.0
15
45
20
15
3.5
4.5
MAX.
-
4.0
± 500
250
1000
15
0.10
-
860
350
100
17
-
-
30
90
40
30
-
UNIT
V
V
nA
μA
A
S
V
DS
> I
D(on)
x R
DS(on)
max., I
D
= 9.0 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 11
I
D
= 20 A, V
DS
= 0.8 max.
rating, see fig. 18 for test
circuit (Gate charge is
essentially independent of
operating temperature)
pF
V
GS
= 10 V
nC
V
DD
= 25 V, I
D
= 9.0 A,
Z
0
= 50
,
see fig. 5
b
Modified MOSFET
symbol showing the
internal device
inductances
ns
D
-
-
G
nH
-
S
-
-
-
-
-
-
-
-
100
0.4
15
A
60
1.5
-
-
V
ns
μC
G
S
T
C
= 25 °C, I
S
= 15 A, V
GS
= 0 V
T
J
= 150 °C, I
F
= 15 A, dI
F
/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5).
b. Pulse test: Pulse width
300 μs; duty cycle
2 %.
www.vishay.com
2
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
IRFZ20, SiHFZ20
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Saturation Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
3
IRFZ20, SiHFZ20
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
IRFZ20, SiHFZ20
Vishay Siliconix
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
V
DS
t
p
V
DD
V
DS
I
AS
Fig. 12a - Clamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
5
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