SIHFZ20-E3 datasheet, PDF - EEWORLD Datasheet

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SIHFZ20-E3: Description15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size2MB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHFZ20-E3 Overview

15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SIHFZ20-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	ULTRA LOW-ON RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	5 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	15 A
Maximum drain current (ID)	15 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	40 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFZ20, SiHFZ20

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

9.0

3.0

Single

0.10

FEATURES

•

Extremely Low R

DS(on)

Compact Plastic Package

Fast Switching

Low Drive Current

Ease of Paralleling

Excellent Temperature Stability

Parts Per Million Quality

Compliant to RoHS Directive 2002/95/EC

TO-220AB

DESCRIPTION

The technology has expanded its product base to serve the

low voltage, very low R

DS(on)

MOSFET transistor

requirements.

Vishay’s highly efficient geometry and

unique processing have been combined to create the lowest

on resistance per device performance. In addition to this

feature all have documented reliability and parts per million

quality!

The transistor also offer all of the well established

advantages of MOSFETs such as voltage control, very fast

switching, ease of paralleling, and temperature stability of

the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers, high energy pulse circuits, and in systems that

are operated from low voltage batteries, such as

automotive, portable equipment, etc.

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

TO-220AB

IRFZ20PbF

SiHFZ20-E3

IRFZ20

SiHFZ20

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Single Pulse Avalanche Energy

Linear Derating Factor (see fig. 16)

Maximum Power Dissipation (see fig. 16)

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

= 25 °C

for 10 s

, T

stg

LIMIT

± 20

0.32

- 55 to + 150

300 (0.063" (1.6 mm) from case

UNIT

W/°C

°C

Notes

a. T

= 25 °C to 150 °C

b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).

c. Starting T

= 25 °C, L = 0.07 mH, R

= 25

,

= 12 A

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91340

S10-1682-Rev. A, 26-Jul-10

www.vishay.com

SIHFZ20-E3 Related Products

	SIHFZ20-E3	SIHFZ20
Description	15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Is it lead-free?	Lead free	Contains lead
Is it Rohs certified?	conform to	incompatible
Maker	Vishay	Vishay
Parts packaging code	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	5 mJ	5 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (Abs) (ID)	15 A	15 A
Maximum drain current (ID)	15 A	15 A
Maximum drain-source on-resistance	0.1 Ω	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	240
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	40 W	40 W
Maximum pulsed drain current (IDM)	60 A	60 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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