IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5.0 V
8.4
3.5
6.0
Single
D
FEATURES
60
0.20
•
•
•
•
•
•
•
•
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Logic-level gate drive
R
DS(on)
specified at V
GS
= 4 V and 5 V
Available
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
SOT-223
D
G
G
D
S
Marking code: LA
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SOT-223
SiHLL014TR-GE3
IRLL014TRPbF
a
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
a
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
60
± 10
2.7
1.7
22
0.025
0.017
100
2.7
0.31
3.1
2.0
4.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 16 mH, R
g
= 25
,
I
AS
= 2.7 A (see fig. 12).
c. I
SD
10 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
MIN.
-
-
TYP.
-
-
MAX.
60
40
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
a
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 10 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 5.0 V
V
GS
= 4.0 V
I
D
= 1.6 A
b
I
D
= 1.4 A
b
MIN.
60
-
1.0
-
-
-
-
-
3.2
-
-
-
-
-
-
-
TYP.
-
0.073
-
-
-
-
-
-
-
400
170
42
-
-
-
9.3
110
17
26
4.0
6.0
MAX.
-
-
2.0
± 100
25
250
0.20
0.28
-
-
-
-
8.4
3.5
6.0
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
DS
= 25 V, I
D
= 1.6 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 10 A, V
DS
= 48 V,
see fig. 6 and 13
b
pF
V
GS
= 5.0 V
nC
V
DD
= 30 V, I
D
= 10 A,
R
g
= 12
,
R
D
= 2.8
,
see fig. 10
b
-
-
-
ns
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
nH
-
S
-
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
-
-
-
-
-
-
-
65
0.33
2.7
A
22
1.6
130
0.65
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 2.7 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 10 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLL014, SiHLL014
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
Vishay Siliconix
I
D
, Drain Current (A)
V
GS
Top 7.5 V
5.0 V
4.0 V
3.5 V
3.0 V
2.75 V
Bottom 2.5 V
10
0
3.0
2.5
2.0
1.5
1.0
0.5
10
1
I
D
= 10 A
V
GS
= 10 V
10
-1
2.25 V
10
-2
20 µs Pulse Width
T
C
=
25 °C
10
-1
10
0
10
1
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
T
J,
Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
I
D
, Drain Current (A)
Capacitance (pF)
V
GS
Top 7.5 V
5.0 V
4.0 V
10
1
3.5 V
3.0 V
2.75 V
Bottom 2.5 V
700
600
500
400
300
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
0
2.25 V
C
iss
C
oss
10
-1
200
100
0
10
0
10
1
C
rss
10
-2
20 µs Pulse Width
T
C
=
150 °C
10
0
10
1
10
-1
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
V
DS,
Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
1
150 °C
10
V
GS
, Gate-to-Source Voltage (V)
I
D
= 10 A
I
D
, Drain Current (A)
10
0
6
V
DS
= 48 V
V
DS
= 30 V
10
-1
25 °C
6
4
10
-2
20 µs Pulse Width
V
DS
=
25 V
2
2.5
3
3.5
4
4.5
5
2
For test circuit
see figure 13
10
-3
0
0
2
4
6
8
10
V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S16-0015-Rev. F, 18-Jan-16
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91319
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
R
D
I
SD
, Reverse Drain Current (A)
T
J
= 150 °C
10
1
R
g
V
GS
V
DS
D.U.T.
+
- V
DD
10
0
T
J
= 25 °C
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
10
-1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
V
DS
90 %
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10 %
V
GS
10
3
5
2
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
Operation in this area limited by R
DS(on)
I
D
, Drain Current (A)
10
2
5
2
10
5
2
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
5
2
0.1
0.1
2
5
1
2
5
10
2
5
10
2
2
5
10
3
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
3.0
2.5
I
D
, Drain Current (A)
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
10
2
Thermal Response (Z
thJC
)
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-4
10
-3
10
-2
0.1
1
10
1
10
2
10
3
10
-1
10
-2
10
-5
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary t
p
to obtain
required I
AS
R
g
V
DS
t
p
V
DS
V
DD
D.U.T
I
AS
+
-
V
DD
V
DS
10 V
t
p
0.01
Ω
I
AS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
E
AS
, Single Pulse Avalanche Energy (mJ)
250
I
D
1.2 A
1.7 A
Bottom 2.7 A
Top
200
150
100
50
V
DD
= 25 V
25
50
75
100
125
150
0
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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