SIHLL014T-E3 datasheet, PDF - EEWORLD Datasheet

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SIHLL014T-E3: DescriptionPOWER, FET; CategoryDiscrete semiconductor The transistor; File Size171KB，8 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHLL014T-E3 Overview

POWER, FET

SIHLL014T-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	2.7 A
Maximum drain current (ID)	2.7 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	3.1 W
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRLL014, SiHLL014

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

max. (nC)

(nC)

Configuration

= 5.0 V

8.4

3.5

6.0

Single

FEATURES

0.20

•

Surface mount

Available in tape and reel

Dynamic dV/dt rating

Logic-level gate drive

DS(on)

specified at V

= 4 V and 5 V

Available

Fast switching

Ease of paralleling

Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

DESCRIPTION

SOT-223

Marking code: LA

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

SOT-223

SiHLL014TR-GE3

IRLL014TRPbF

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature)

SYMBOL

at 10 V

= 25 °C

= 100 °C

= 25 °C

dV/dt

, T

stg

for 10 s

LIMIT

± 10

2.7

1.7

0.025

0.017

100

2.7

0.31

3.1

2.0

4.5

-55 to +150

300

UNIT

W/°C

V/ns

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 16 mH, R

= 25

,

= 2.7 A (see fig. 12).

c. I



10 A, dI/dt



90 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-0015-Rev. F, 18-Jan-16

Document Number: 91319

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHLL014T-E3 Related Products

	SIHLL014T-E3	IRLL014_10	SIHLL014-GE3	SIHLL014T	SIHLL014TR-GE3	SIHLL014	SIHLL014-E3
Description	POWER, FET	POWER, FET	POWER, FET	POWER, FET	POWER, FET	POWER, FET	POWER, FET
Is it lead-free?	Lead free	-	Lead free	Contains lead	Lead free	Contains lead	Lead free
Is it Rohs certified?	conform to	-	conform to	incompatible	conform to	incompatible	conform to
Parts packaging code	SOT	-	SOT	SOT	SOT	SOT	SOT
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	4	-	4	4	4	4	4
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	-	-	LOGIC LEVEL COMPATIBLE	-	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	100 mJ	-	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ
Shell connection	DRAIN	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	-	60 V	60 V	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	2.7 A	-	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A
Maximum drain current (ID)	2.7 A	-	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A
Maximum drain-source on-resistance	0.2 Ω	-	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	-	e3	e0	e3	e0	e3
Humidity sensitivity level	1	-	1	-	1	-	1
Number of components	1	-	1	1	1	1	1
Number of terminals	3	-	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260	240	260	240	260
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	3.1 W	-	3.1 W	3.1 W	3.1 W	3.1 W	3.1 W
Maximum pulsed drain current (IDM)	22 A	-	22 A	22 A	22 A	22 A	22 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	-	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	-	40	30	40	30	40
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON

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