FC40SA50FKP
Vishay Semiconductors
Power MOSFET, 40 A
FEATURES
• Low gate charge Q
g
results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche voltage
and current
SOT-227
• Low R
DS(on)
• Fully insulated package
• UL pending
PRODUCT SUMMARY
V
DSS
R
DS(on)
(typical)
I
D
Type
Package
500 V
0.084
Ω
40 A
Modules - MOSFET
SOT-227
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
• Hard switched and high frequency circuits
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current, V
GS
at 10 V
Pulsed drain current
Power dissipation
Linear derating factor
Gate to source voltage
Peak diode recovery dV/dt
Operating junction and storage temperature range
V
GS
dV/dt
(2)
T
J
, T
Stg
SYMBOL
I
D
I
DM (1)
P
D
T
C
= 25 °C
TEST CONDITIONS
T
C
= 25 °C
T
C
= 100 °C
MAX.
40
26
160
430
3.45
± 30
9.0
- 55 to + 150
W
W/°C
V
V/ns
°C
A
UNITS
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2)
I
SD
≤
40 A, dI/dt
≤
150 A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150 °C
AVALANCHE CHARACTERISTICS
PARAMETER
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
SYMBOL
E
AS (1)
I
AR (2)
E
AR (2)
TYP.
-
-
-
MAX.
1240
40
43
UNITS
mJ
A
mJ
Notes
(1)
Starting T = 25 °C, L = 1.55 mH, R = 25
Ω,
I
J
g
AS
= 40 A, dV/dt = 5.5 V/ns (see fig. 12a)
(2)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Document Number: 94542
Revision: 12-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
FC40SA50FKP
Vishay Semiconductors
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to sink, flat, greased surface
SYMBOL
R
thJC
R
thCS
TYP.
-
0.05
MAX.
0.29
-
UNITS
°C/W
Power MOSFET, 40 A
STATIC CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Drain to source breakdown voltage
SYMBOL
V(
BR)DSS
R
DS(on) (1)
V
GS(th)
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
GS
= 10 V, I
D
= 24 A
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 30 V
V
GS
= - 30 V
MIN.
500
-
-
3.0
-
-
-
-
TYP.
-
0.60
0.084
-
-
-
-
-
MAX.
-
-
0.10
5.0
50
250
250
- 250
UNITS
V
V/°C
Ω
V
μA
Breakdown voltage temperature coefficient
ΔV
(BR)DSS
/ΔT
J
Static drain to source on-resistance
Gate threshold voltage
Drain to source leakage current
Gate to source forward leakage
Gate to source reverse leakage
Note
(1)
Pulse width
≤
300 μs; duty cycle
≤
2 %
nA
DYNAMIC CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Forward transconductance
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
(1)
SYMBOL
g
fs
Q
g (1)
Q
gs (1)
Q
gd (1)
t
d(on) (1)
t
r (1)
t
d(off) (1)
t
f (1)
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
(2)
TEST CONDITIONS
V
DS
= 50 V, I
D
= 28 A
I
D
= 40 A
V
DS
= 400 V
V
GS
= 10 V; see fig. 6 and 13
V
DD
= 250 V
I
D
= 40 A
R
g
= 1.0
Ω
V
GS
= 10 V, see fig. 10
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
V
GS
= 0 V, V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V, V
DS
= 480 V, f = 1.0 MHz
V
GS
= 0 V, V
DS
= 0 V to 480 V
MIN.
23
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
25
140
55
74
8310
960
120
10 170
240
440
MAX.
-
270
84
130
-
-
-
-
-
-
-
-
-
-
UNITS
S
nC
ns
pF
Notes
Pulse width
≤
300 μs; duty cycle
≤
2 %
(2)
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DSS
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94542
Revision: 12-May-10
FC40SA50FKP
Power MOSFET, 40 A
Vishay Semiconductors
DIODE CHARACTERISTICS
PARAMETER
Continuous source current
(body diode)
Pulsed source current (body diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Forward turn-on time
SYMBOL
I
S
I
SM
(1)
TEST CONDITIONS
D
MIN.
-
-
S
TYP.
-
-
-
620
14
38
MAX.
40
UNITS
MOSFET symbol
showing the integral reverse
p-n junction diode
T
J
= 25 °C, I
S
= 40 A, V
GS
= 0 V
A
G
160
1
940
21
-
V
ns
μC
A
V
SD (2)
t
rr (2)
Q
rr
I
RRM
t
on
-
-
-
-
T
J
= 25 °C, I
F
= 47 A; dI/dt = 100 A/μs
T
J
= 25 °C
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+ L
D
)
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2)
Pulse width
≤
300 μs; duty cycle
≤
2 %
1000
V
GS
15
10
8.0
7.0
6.0
5.5
B O TTO M 5.0
TO P
1000
I
D
, Drain-to-Source Current (A
)
I
D
, Drain-to-Source Current (A)
100
100
T
J
=150°C
10
10
1
5V
T
J
=25°C
1
V
DS
=20V
20μs PULSE WIDTH
0.1
0.1
20 μs PULSE WIDTH
TJ=25°C
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V
)
4
5
6
7
8
9
10
11
12
V
GS
, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1000
V
G S
3.5
15
10
8.0
7.0
6.0
5.5
5.0
B O TTO M 4.5
TO P
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.0
I
D
=24A
I
D
, Drain-to-Source Current (A)
2.5
2.0
10
1.5
1
4.5 V
20 μs PULSE
WIDTH
T 150°C
1.0
V
GS
=10V
0.5
0.1
0.1
1
0.0
10
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V
)
T
J
, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 94542
Revision: 12-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
FC40SA50FKP
Vishay Semiconductors
100000
VGS
Ciss
C
rss
Coss
= 0V,
f = 1 MHZ
= Cgs + C gd, Cds SHORTED
=C
gd
= Cds + C gd
Power MOSFET, 40 A
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
I
D
, Drain Current (A)
10000
C, Capacitance(pF)
Ciss
100
1000
100us
10
T
C
= 25°C
T
J
= 150°C
Single Pulse
1
1ms
10ms
Coss
100
Crss
10
1
10
100
1000
10
100
V
DS
, Drain-to-Source Voltage (V)
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
20
I
D
=40A
Fig. 8 - Maximum Safe Operating Area
40
V
GS
, Gate-to-Source Voltage (V)
15
10
ID, Drain Current (A)
0
100
200
300
30
20
5
10
0
0
25
50
75
100
125
150
Q
G
, Total Gate Charge (nC)
TC, Case Temperature (°C)
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
1000
Fig. 9 - Maximum Drain Current vs.
Case Temperature
I
SD
, Reverse Drain Current (A)
100
T
J
=150°C
10
T
J
=25°C
1
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
V
GS
=0
0.1
0.2
0.7
1.2
1.7
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source Drain Diode Forward Voltage
Fig. 10a - Switching Time Test Circuit
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94542
Revision: 12-May-10
FC40SA50FKP
Power MOSFET, 40 A
Vishay Semiconductors
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
1.000
Thermal Response ( ZthJC
0.100
D = 0.50
0.30
0.10
R
1
R
1
J
R
2
R
2
R
3
R
3
C
J
0.010
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Ri (°C/W)
0.161
0.210
0.147
τi (sec)
0.000759
0.017991
0.06094
1
1
2
2
3
3
Ci= i Ri
Ci i Ri
Notes:
1. Duty factor D = t1/t2
2. Peak TJ=PDM x ZthJC + TC
0.01
0.1
1
0.001
0.00001
0.0001
0.001
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
3000
EAS, Single Pulse Avalanche Energy (mJ)
TOP
2500
BOTTOM
I
D
...
18A
26A
40A
15 V
2000
1500
V
DS
1000
L
Driver
R
G
500
20 V
D.U.T
I
AS
t
p
25
50
75
100
125
150
S tarting TJ, Junction Tem perature (°C)
+
-
V
DD
A
0
0.01
Ω
Fig. 12a - Maximum Avalanche Energy vs. Drain Current
Fig. 12b - Unclamped Inductive Test Circuit
Document Number: 94542
Revision: 12-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
EEWORLD
