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FC40SA50FKP

Description
Power MOSFET, 40 A
CategoryDiscrete semiconductor    The transistor   
File Size193KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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FC40SA50FKP Overview

Power MOSFET, 40 A

FC40SA50FKP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionFLANGE MOUNT, R-PUFM-X4
Contacts4
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)1240 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)40 A
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PUFM-X4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)430 W
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FC40SA50FKP
Vishay Semiconductors
Power MOSFET, 40 A
FEATURES
• Low gate charge Q
g
results in simple drive
requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche voltage
and current
SOT-227
• Low R
DS(on)
• Fully insulated package
• UL pending
PRODUCT SUMMARY
V
DSS
R
DS(on)
(typical)
I
D
Type
Package
500 V
0.084
Ω
40 A
Modules - MOSFET
SOT-227
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
• Hard switched and high frequency circuits
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current, V
GS
at 10 V
Pulsed drain current
Power dissipation
Linear derating factor
Gate to source voltage
Peak diode recovery dV/dt
Operating junction and storage temperature range
V
GS
dV/dt
(2)
T
J
, T
Stg
SYMBOL
I
D
I
DM (1)
P
D
T
C
= 25 °C
TEST CONDITIONS
T
C
= 25 °C
T
C
= 100 °C
MAX.
40
26
160
430
3.45
± 30
9.0
- 55 to + 150
W
W/°C
V
V/ns
°C
A
UNITS
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2)
I
SD
40 A, dI/dt
150 A/μs, V
DD
V
(BR)DSS
, T
J
150 °C
AVALANCHE CHARACTERISTICS
PARAMETER
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
SYMBOL
E
AS (1)
I
AR (2)
E
AR (2)
TYP.
-
-
-
MAX.
1240
40
43
UNITS
mJ
A
mJ
Notes
(1)
Starting T = 25 °C, L = 1.55 mH, R = 25
Ω,
I
J
g
AS
= 40 A, dV/dt = 5.5 V/ns (see fig. 12a)
(2)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Document Number: 94542
Revision: 12-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

FC40SA50FKP Related Products

FC40SA50FKP FC40SA50FK
Description Power MOSFET, 40 A Power MOSFET, 40 A
Is it Rohs certified? conform to incompatible
Maker Vishay Vishay
package instruction FLANGE MOUNT, R-PUFM-X4 FLANGE MOUNT, R-PUFM-X4
Contacts 4 4
Reach Compliance Code unknown unknow
Avalanche Energy Efficiency Rating (Eas) 1240 mJ 1240 mJ
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (Abs) (ID) 40 A 40 A
Maximum drain current (ID) 40 A 40 A
Maximum drain-source on-resistance 0.1 Ω 0.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PUFM-X4 R-PUFM-X4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 430 W 430 W
Maximum pulsed drain current (IDM) 160 A 160 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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