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FEP30BP

Description
30 A, 100 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size73KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

FEP30BP Overview

30 A, 100 V, SILICON, RECTIFIER DIODE

FEP30BP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
Maximum operating temperature150 °C
Maximum output current30 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.035 µs
surface mountNO
FEP30AP thru FEP30JP
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
3
2
1
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, dc-to-dc
converters, and other power switching application.
30 A
50 V to 600 V
300 A
35 ns, 50 ns
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
0.95 V, 1.3 V, 1.5 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating storage and temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
FEP
30AP
50
35
50
FEP
30BP
100
70
100
FEP
30CP
150
105
150
FEP
30DP
200
140
200
30
300
- 55 to + 150
FEP
30FP
300
210
300
FEP
30GP
400
280
400
FEP
30HP
500
350
500
FEP
30JP
600
420
600
UNIT
V
V
V
A
A
°C/W
Document Number: 88597
Revision: 08-Apr-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

FEP30BP Related Products

FEP30BP FEP30AP FEP30CP FEP30DP FEP30FP FEP30GP FEP30HP FEP30JP-E3-45
Description 30 A, 100 V, SILICON, RECTIFIER DIODE 30 A, 50 V, SILICON, RECTIFIER DIODE 30 A, SILICON, RECTIFIER DIODE 30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AD 30 A, 300 V, SILICON, RECTIFIER DIODE, TO-247AD 30 A, SILICON, RECTIFIER DIODE 30 A, 500 V, SILICON, RECTIFIER DIODE, TO-247AD 30 A, 50 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible -
Maker Vishay Vishay Vishay Vishay Vishay - Vishay -
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknown -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 0.95 V 0.95 V 0.95 V 0.95 V 1.3 V 1.3 V 1.5 V -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Maximum output current 30 A 30 A 30 A 30 A 30 A 30 A 30 A -
Maximum repetitive peak reverse voltage 100 V 50 V 150 V 200 V 300 V 400 V 500 V -
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.05 µs 0.05 µs 0.05 µs -
surface mount NO NO NO NO NO NO NO -
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