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FEP30DP

Description
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AD
CategoryDiscrete semiconductor    diode   
File Size73KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

FEP30DP Overview

30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AD

FEP30DP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
Maximum operating temperature150 °C
Maximum output current30 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountNO
FEP30AP thru FEP30JP
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
3
2
1
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, dc-to-dc
converters, and other power switching application.
30 A
50 V to 600 V
300 A
35 ns, 50 ns
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
0.95 V, 1.3 V, 1.5 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating storage and temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
FEP
30AP
50
35
50
FEP
30BP
100
70
100
FEP
30CP
150
105
150
FEP
30DP
200
140
200
30
300
- 55 to + 150
FEP
30FP
300
210
300
FEP
30GP
400
280
400
FEP
30HP
500
350
500
FEP
30JP
600
420
600
UNIT
V
V
V
A
A
°C/W
Document Number: 88597
Revision: 08-Apr-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

FEP30DP Related Products

FEP30DP FEP30AP FEP30BP FEP30CP FEP30FP FEP30GP FEP30HP FEP30JP-E3-45
Description 30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AD 30 A, 50 V, SILICON, RECTIFIER DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE 30 A, SILICON, RECTIFIER DIODE 30 A, 300 V, SILICON, RECTIFIER DIODE, TO-247AD 30 A, SILICON, RECTIFIER DIODE 30 A, 500 V, SILICON, RECTIFIER DIODE, TO-247AD 30 A, 50 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible -
Maker Vishay Vishay Vishay Vishay Vishay - Vishay -
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknown -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 0.95 V 0.95 V 0.95 V 0.95 V 1.3 V 1.3 V 1.5 V -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Maximum output current 30 A 30 A 30 A 30 A 30 A 30 A 30 A -
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 150 V 300 V 400 V 500 V -
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.05 µs 0.05 µs 0.05 µs -
surface mount NO NO NO NO NO NO NO -
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