The LV51133T is a protection IC for 2-cell lithium-ion secondary batteries.
Features
•
Monitoring function for each cell:
•
High detection voltage accuracy:
•
Hysteresis cancel function:
•
Discharge current monitoring function:
•
Low current consumption:
•
0V cell charging function:
Detects overcharge and over-discharge conditions and controls the
charging and discharging operation of each cell.
Over-charge detection accuracy
±25mV
Over-discharge detection accuracy ±100mV
The hysteresis of over-discharge detection voltage is cancelled by
connection of a load after overcharging has been detected.
Detects over-currents, load shorting, and excessively high voltage of a
charger.
Normal operation mode typ. 6.0μA
Stand by mode
max. 0.2μA
Charging is enabled even when the cell voltage is 0V by giving a
voltage between the VDD pin and V- pin.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system,
safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives
in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any
guarantee thereof. If you should intend to use our products for new introduction or other application different
from current conditions on the usage of automotive device, communication device, office equipment, industrial
equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the
intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely
responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
O1911HKPC 20110930-S00004 No.A1985-1/9
LV51133T
Specifications
Absolute Maximum Ratings
at Ta = 25°C
Parameter
Power supply voltage
Input voltage
Charger minus voltage
Output voltage
Cout pin voltage
Dout pin voltage
Allowable power dissipation
Operating ambient temperature
Storage temperature
(Note)
1) Absolute maximum ratings represent the values which cannot be exceeded for any length of time.
2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high
voltage, or drastic temperature change, the reliability of the IC may be degraded.
Please contact us for the further details.
Vcout
Vdout
Pd max
Topr
Tstg
Independent IC
VDD-28 to VDD+0.3
VSS-0.3 to VDD+0.3
170
-30 to +85
-40 to +125
V
V
mW
°C
°C
Symbol
VDD
V-
Conditions
Ratings
-0.3 to +12
VDD-28 to VDD+0.3
Unit
V
V
Recommendation Operating Conditions
at Ta = 25°C
Parameter
Supply voltage
Symbol
VDD
Conditions
Ratings
6.0 to 8.0
Unit
V
No.A1985-2/9
LV51133T
Electrical Characteristics
at Ta = 25°C, unless especially specified.
Parameter
Operation input voltage
0V cell charging minimum operation
voltage
Over-charge detection voltage
Vd1
Ta=0 to 45°C *1
Over-charge release voltage
Vr1
V-
≤
Vd3
V- > Vd3
Over-charge detection delay time
Over-charge release delay time
Over-discharge detection voltage
Over-discharge release hysteresis
voltage
Over-discharge detection delay time
Over-discharge release delay time
Over-current detection voltage
Over-current release hysteresis voltage
Over-current detection delay time
Over-current release delay time
Short circuit detection voltage
Short circuit detection delay time
Excessive charger detection voltage
Excessive charge detection release
hysteresis voltage
Stand-by release voltage
Vstb
VDD-Vc=2.0V, Vc-VSS=2.0V
Voltage between V- and VSS
VDD-Vc=3.5V, Vc-VSS=3.5V *2
VDD-Vc=3.5V, Vc-VSS=3.5V
After over-discharge is detected.
After over-current or short-circuit is detected.
IOL=50μA, VDD-Vc=4.4V, Vc-VSS=4.4V
IOL=50μA, VDD-Vc=3.9V, Vc-VSS=3.9V
IOL=50μA, VDD-Vc=2.2V, Vc-VSS=2.2V
IOL=50μA, VDD-Vc=3.9V, Vc-VSS=3.9V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=2.2V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD
×0.4
VDD
×0.5
VDD-0.5
0.0
6.0
1.0
13.0
0.2
VDD
×0.6
VDD-0.5
0.5
VDD
×0.4
0.5
0.5
100
15
VDD
×0.5
1.5
1.5
200
30
VDD
×0.6
3.0
3.0
400
60
0.5
V
td2
tr2
Vd3
Vh3
td3
tr3
Vd4
td4
Vd5
Vh5
VDD-Vc=3.5V→2.2V, Vc-VSS=3.5V
VDD-Vc=2.2V→3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
VDD-Vc=3.5V, Vc-VSS=3.5V
Voltage between V- and VSS
VDD-Vc=3.5V, Vc-VSS=3.5V
50
0.5
0.180
5.0
10.0
0.5
1.0
0.125
-0.60
25.0
100
1.0
0.200
10.0
20.0
1.0
1.3
0.250
-0.45
50.0
150
1.5
0.220
20.0
30.0
1.5
1.6
0.500
-0.30
100.0
ms
ms
V
mV
ms
ms
V
ms
V
mV
td1
tr1
Vd2
Vh2
VDD-Vc=3.5V→4.5V, Vc-VSS=3.5V
VDD-Vc=4.5V→3.5V, Vc-VSS=3.5V
4.225
4.215
4.000
4.150
0.5
20.0
2.70
10.0
1.0
40.0
2.80
20.0
4.250
4.250
4.050
4.275
4.285
4.100
4.260
1.5
60.0
2.90
49.0
V
V
V
V
s
ms
V
mV
Symbol
Vcell
Vmin
Conditions
min
Voltage between VDD and VSS
Voltage between VDD-V- under VDD-VSS =0
1.5
Ratings
typ
max
10
1.5
V
V
Unit
Excessive charger detection delay time
Excessive charger release delay time
Internal resistance (VM-VDD)
Internal resistance (VM-VSS)
Cout Nch ON voltage
Cout Pch ON voltage
Dout Nch ON voltage
Dout Pch ON voltage
Vc input current
Current consumption
Stand-by current
T-terminal input ON voltage
td5
tr5
RDD
RSS
VOL1
VOH1
VOL2
VOH2
Ivc
IDD
Istb
Vtest
ms
ms
kΩ
kΩ
V
V
V
V
μA
μA
μA
V
*1 The Ratings of the table above is a design targets and are not measured.
*2 Under over-discharge state, delay operation starts after release of over-discharge.
No.A1985-3/9
LV51133T
Package Dimensions
unit : mm (typ)
3245B
200
Pd max -- Ta
Independent IC
3.0
8
Allowable power dissipation, Pd max -- mW
170
150
3.0
4.9
100
0.5
1
(0.53)
2
0.65
0.25
(0.85)
1.1MAX
68
50
0.125
0
-30 -20
0
20
40
60
80
100
Ambient temperature, Ta --
°C
0.08
SANYO : MSOP8(150mil)
Pin Assignment
Dout
8
T
7
Vc Sense
6
5
2
VDD Cout
1
3
V-
4
VSS
Top view
Pin Functions
Pin No.
1
2
3
4
5
6
7
8
VDD
Cout
V-
VSS
Sense
Vc
T
Dout
Symbol
VDD pin
Overcharge detection output pin
Charger minus voltage input pin
VSS pin
Sense pin
Intermediate between both cell voltage input pin
Pin to shorten detection time (“H”:Shortening mode, “L” or “Open”:Normal mode)
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