Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD7D
DESCRIPTION
·With
TO-3 package
·High
power dissipation
APPLICATIONS
·power
amplifier
·Low-speed
switching
·Power
regulator
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
·
Absolut maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=75℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
250
200
5
7.5
75
-55~175
-55~175
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.33
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
I
CEO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
DC current gain
CONDITIONS
I
C
=3mA ; I
B
=0
I
C
=3mA ; I
E
=0
I
E
=2mA ; I
C
=0
I
C
=3.75A ;I
B
=0.38 A
V
CE
=30V; I
B
=0
I
C
=3.75A ; V
CE
=10V
15
MIN
200
250
5
TYP.
3DD7D
MAX
UNIT
V
V
V
1.2
1.0
180
V
mA
h
FE
classifications
红
15-25
橙
25-40
黄
40-55
绿
55-80
蓝
80-120
紫
120-180
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
3DD7D
Fig.2 Outline dimensions (unindicated tolerance:
±0.10mm)
3
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