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30C02CH

Description
Low-Frequency General-Purpose Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size46KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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30C02CH Overview

Low-Frequency General-Purpose Amplifier Applications

30C02CH Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.7 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)540 MHz
Base Number Matches1
Ordering number : ENN7363
30C02CH
NPN Epitaxial Planar Silicon Transistor
30C02CH
Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
unit : mm
2150A
[30C02CH]
Low-frequency Amplifier, high-speed switching,
small motor drive.
Features
0.4
0.6
3
1
1.9
2
0.6
1.6
2.8
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (600mm
!0.8mm)
2
Conditions
0.7
0.9
0.2
Ratings
40
30
5
700
1.4
700
150
--55 to +150
0.2
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
2.9
0.15
Unit
V
V
V
mA
A
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=30V, IE=0
VEB=4V, IC=0
VCE=2V, IC=50mA
VCE=10V, IC=50mA
300
540
Conditions
Ratings
min
typ
max
100
100
800
MHz
Unit
nA
nA
Marking : CL
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo
http://semicon.sanyo.com/en/network
TOKYO, 110-8534 JAPAN
Bldg., 1-10,
Chome,
Ueno,
Taito-ku,
TOKYO OFFICE Tokyo Bldg., 1-10, 1
1 Chome,
Ueno,
Taito-ku, TOKYO, 110-8534 JAPAN
O2203 TS IM TA-100140 No.7363-1/4

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