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FM25C160C

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage   
File Size276KB,13 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
Download Datasheet Parametric Compare View All

FM25C160C Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25C160C Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage4.5 V
Rated supply voltage5 V
Processing package descriptionGreen, MS-012AA, SOIC-8
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width8
organize2K × 8
storage density16384 deg
operating modeSynchronize
Number of digits2048 words
Number of digits2K
Memory IC typememory circuit
Preliminary
FM25C160C
16Kb Serial 5V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High Endurance 1 Trillion (10
12
) Read/Writes
36 year Data Retention at +75C
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz maximum Bus Frequency
Direct hardware replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
250
A
Active Current (1 MHz)
4
A
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM25C160C is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 36 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
The FM25C160C performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM25C160C is capable of
supporting up to 10
12
read/write cycles, or a million
times more write cycles than EEPROM.
These capabilities make the FM25C160C ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25C160C provides substantial benefits to
users of serial EEPROM, in a hardware drop-in
replacement. The FM25C160C uses the high-speed
SPI bus, which enhances the high-speed write
capability of F-RAM technology. The specifications
are guaranteed over an industrial temperature range
of -40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
5V
Ground
Ordering Information
FM25C160C-G
FM25C160C-GTR
“Green” 8-pin SOIC
“Green” 8-pin SOIC,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.1
July 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-F-RAM, (719) 481-7000
www.ramtron.com
Page 1 of 13

FM25C160C Related Products

FM25C160C FM25C160C-G BFG480W_15
Description SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 NPN wideband transistor
Number of functions 1 1 -
Number of terminals 8 8 -
Maximum operating temperature 85 Cel 85 Cel -
Minimum operating temperature -40 Cel -40 Cel -
Maximum supply/operating voltage 5.5 V 5.5 V -
Minimum supply/operating voltage 4.5 V 4.5 V -
Rated supply voltage 5 V 5 V -
Processing package description Green, MS-012AA, SOIC-8 Green, MS-012AA, SOIC-8 -
state DISCONTINUED DISCONTINUED -
packaging shape Rectangle Rectangle -
Package Size SMALL OUTLINE SMALL OUTLINE -
surface mount Yes Yes -
Terminal form GULL WING GULL WING -
Terminal spacing 1.27 mm 1.27 mm -
Terminal location pair pair -
Packaging Materials Plastic/Epoxy Plastic/Epoxy -
Temperature level INDUSTRIAL INDUSTRIAL -
memory width 8 8 -
organize 2K × 8 2K × 8 -
storage density 16384 deg 16384 deg -
operating mode Synchronize Synchronize -
Number of digits 2K 2K -
Memory IC type memory circuit memory circuit -
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