FM25H20 datasheet, PDF - EEWORLD Datasheet

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FM25H20: DescriptionSPECIALTY MEMORY CIRCUIT, PDSO8; Categorystorage; File Size333KB，15 Pages; ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation); Websitehttp://www.cypress.com/

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FM25H20 Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25H20 Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	8
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	3.6 V
Minimum supply/operating voltage	2.7 V
Rated supply voltage	3.3 V
Processing package description	5 × 6 MM, 1.27 MM PITCH, GREEN, TDFN-8
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	NO
Terminal spacing	1.27 mm
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Temperature level	INDUSTRIAL
memory width	8
organize	256K × 8
storage density	2.10E6 deg
operating mode	Synchronize
Number of digits	262144 words
Number of digits	256K
Memory IC type	memory circuit

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Pre-Production

FM25H20

2Mb Serial 3V F-RAM Memory

Features

2M bit Ferroelectric Nonvolatile RAM

•

Organized as 256K x 8 bits

•

High Endurance 100 Trillion (10

) Read/Writes

•

10 Year Data Retention

•

NoDelay™ Writes

•

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

•

Up to 40 MHz Frequency

•

Direct Hardware Replacement for Serial Flash

•

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

•

Hardware Protection

•

Software Protection

Low Power Consumption

•

Low Voltage Operation 2.7V – 3.6V

•

Sleep Mode Current 3

µA

(typ.)

Industry Standard Configurations

•

Industrial Temperature -40°C to +85°C

•

8-pin “Green”/RoHS TDFN Package

•

8- pin “Green”/RoHS EIAJ SOIC Package

Description

The FM25H20 is a 2-megabit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by Serial

Flash and other nonvolatile memories.

Unlike Serial Flash, the FM25H20 performs write

operations at bus speed. No write delays are incurred.

Data is written to the memory array immediately

after it has been transferred to the device. The next

bus cycle may commence without the need for data

polling. The product offers virtually unlimited write

endurance, orders of magnitude more endurance than

Serial Flash. Also, F-RAM exhibits lower power

consumption than Serial Flash.

These capabilities make the FM25H20 ideal for

nonvolatile memory applications requiring frequent

or rapid writes or low power operation. Examples

range from data collection, where the number of

write cycles may be critical, to demanding industrial

controls where the long write time of Serial Flash can

cause data loss.

The FM25H20 provides substantial benefits to users

of Serial Flash as a hardware drop-in replacement.

The FM25H20 uses the high-speed SPI bus, which

enhances the high-speed write capability of F-RAM

technology. Device specifications are guaranteed

over an industrial temperature range of -40°C to

+85°C.

This is a product in the pre-production phase of development. Device

characterization is complete and Ramtron does not expect to change the

specifications. Ramtron will issue a Product Change Notice if any

specification changes are made.

Pin Configuration

Top View

VSS

VDD

/HOLD

VSS

VDD

HOLD

Pinout is equivalent to other SPI F-RAM devices.

Pin Name

/HOLD

VDD

VSS

Function

Chip Select

Write Protect

Hold

Serial Clock

Serial Data Input

Serial Data Output

Supply Voltage (2.7 to 3.6V)

Ground

Ordering Information

FM25H20-DG

8-pin “Green”/RoHS TDFN

FM25H20-DGTR

8-pin “Green”/RoHS TDFN,

Tape & Reel

FM25H20-G

8-pin “Green”/RoHS EIAJ SOIC

FM25H20-GTR

8-pin “Green”/RoHS EIAJ

SOIC, Tape & Reel

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 2.2

Sept. 2010

Page 1 of 15

FM25H20 Related Products

	FM25H20	FM25H20-DG	FM25H20-G	FM25H20-GTR
Description	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8
Number of functions	1	1	1	1
Number of terminals	8	8	8	8
Maximum operating temperature	85 Cel	85 °C	85 °C	85 °C
Minimum operating temperature	-40 Cel	-40 °C	-40 °C	-40 °C
surface mount	Yes	YES	YES	YES
Terminal form	NO	NO LEAD	GULL WING	GULL WING
Terminal location	pair	DUAL	DUAL	DUAL
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
memory width	8	8	8	8
organize	256K × 8	256KX8	256KX8	256KX8
Maker	-	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code	-	DFN	SOIC	SOIC
package instruction	-	HVSON,	HVSON,	SOP,
Contacts	-	8	8	8
Reach Compliance Code	-	unknow	unknow	unknow
JESD-30 code	-	R-PDSO-N8	R-PDSO-G8	R-PDSO-G8
length	-	6 mm	6 mm	5.28 mm
memory density	-	2097152 bi	2097152 bi	2097152 bi
Memory IC Type	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
word count	-	262144 words	262144 words	262144 words
character code	-	256000	256000	256000
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	HVSON	HVSON	SOP
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Certification status	-	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	0.8 mm	0.8 mm	2 mm
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	-	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	-	3.3 V	3.3 V	3.3 V
technology	-	CMOS	CMOS	CMOS
Terminal pitch	-	1.27 mm	1.27 mm	1.27 mm
width	-	5 mm	5 mm	5.23 mm

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