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FM25H20-DG

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage    storage   
File Size333KB,15 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
Environmental Compliance
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FM25H20-DG Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25H20-DG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRamtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging codeDFN
package instructionHVSON,
Contacts8
Reach Compliance Codeunknow
JESD-30 codeR-PDSO-N8
length6 mm
memory density2097152 bi
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height0.8 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width5 mm
Pre-Production
FM25H20
2Mb Serial 3V F-RAM Memory
Features
2M bit Ferroelectric Nonvolatile RAM
Organized as 256K x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7V – 3.6V
Sleep Mode Current 3
µA
(typ.)
Industry Standard Configurations
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS TDFN Package
8- pin “Green”/RoHS EIAJ SOIC Package
Description
The FM25H20 is a 2-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25H20 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling. The product offers virtually unlimited write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25H20 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25H20 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The FM25H20 uses the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. Device specifications are guaranteed
over an industrial temperature range of -40°C to
+85°C.
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Pin Configuration
Top View
/S
Q
/W
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
C
D
S
Q
W
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
C
D
Pinout is equivalent to other SPI F-RAM devices.
Pin Name
/S
/W
/HOLD
C
D
Q
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (2.7 to 3.6V)
Ground
Ordering Information
FM25H20-DG
8-pin “Green”/RoHS TDFN
FM25H20-DGTR
8-pin “Green”/RoHS TDFN,
Tape & Reel
FM25H20-G
8-pin “Green”/RoHS EIAJ SOIC
FM25H20-GTR
8-pin “Green”/RoHS EIAJ
SOIC, Tape & Reel
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 2.2
Sept. 2010
Page 1 of 15

FM25H20-DG Related Products

FM25H20-DG FM25H20 FM25H20-G FM25H20-GTR
Description SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
memory width 8 8 8 8
Number of functions 1 1 1 1
Number of terminals 8 8 8 8
Maximum operating temperature 85 °C 85 Cel 85 °C 85 °C
Minimum operating temperature -40 °C -40 Cel -40 °C -40 °C
organize 256KX8 256K × 8 256KX8 256KX8
surface mount YES Yes YES YES
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form NO LEAD NO GULL WING GULL WING
Terminal location DUAL pair DUAL DUAL
Maker Ramtron International Corporation (Cypress Semiconductor Corporation) - Ramtron International Corporation (Cypress Semiconductor Corporation) Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code DFN - SOIC SOIC
package instruction HVSON, - HVSON, SOP,
Contacts 8 - 8 8
Reach Compliance Code unknow - unknow unknow
JESD-30 code R-PDSO-N8 - R-PDSO-G8 R-PDSO-G8
length 6 mm - 6 mm 5.28 mm
memory density 2097152 bi - 2097152 bi 2097152 bi
Memory IC Type MEMORY CIRCUIT - MEMORY CIRCUIT MEMORY CIRCUIT
word count 262144 words - 262144 words 262144 words
character code 256000 - 256000 256000
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code HVSON - HVSON SOP
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified - Not Qualified Not Qualified
Maximum seat height 0.8 mm - 0.8 mm 2 mm
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V - 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V
technology CMOS - CMOS CMOS
Terminal pitch 1.27 mm - 1.27 mm 1.27 mm
width 5 mm - 5 mm 5.23 mm

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