50MT060ULSTAPbF
www.vishay.com
Vishay Semiconductors
"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A
FEATURES
• Generation 4 ultrafast speed IGBT technology
• HEXFRED
®
recovery
diode
with
ultrasoft
reverse
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Al
2
O
3
DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
MTP
• Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz
resonant mode
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
600 V
100 A
1.68 V
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
IGBT
Maximum power dissipation
Diode
P
D
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
Any terminal to case, t = 1 minute
T
C
= 25 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 122 °C
TEST CONDITIONS
MAX.
600
100
50
200
200
48
200
± 20
2500
445
175
205
83
W
V
A
UNITS
V
Revision: 17-Jun-11
1
For technical questions, contact:
indmodules@vishay.com
Document Number: 94540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
50MT060ULSTAPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V
(BR)CES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 15 V, I
C
= 50 A
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 100 A
V
GE
= 15 V, I
C
= 100 A, T
J
= 150 °C
Gate threshold voltage
Diode reverse breakdown voltage
Temperature coefficient of threshold voltage
Forward transconductance
Collector to emitter leaking current
V
GE(th)
V
BR
V
GE(th)
/T
J
g
fe
I
CES
I
C
= 0.5 mA
I
R
= 200 μA
V
CE
= V
GE
, I
C
= 500 μA
V
CE
= 50 V, I
C
= 100 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
I
F
= 100 A, V
GE
= 0 V
I
F
= 100 A, V
GE
= 0 V, T
J
= 150 °C
V
GE
= ± 20 V
MIN.
600
-
-
-
3
600
-
22
-
-
-
-
-
TYP.
-
1.69
1.96
1.88
-
-
- 13
29
-
-
1.64
1.56
-
MAX.
-
2.31
2.55
V
2.24
6
-
-
-
0.25
mA
6
1.82
V
1.74
± 250
nA
mV/°C
S
UNITS
Diode forward voltage drop
Gate to emitter leakage current
V
FM
I
GES
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode junction capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode peak rate of fall of recovery during t
b
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
C
ies
C
oes
C
res
C
t
t
rr
I
rr
Q
rr
dI
(rec)M
/dt
V
CC
= 480 V, I
C
= 50 A
dI/dt = 200 A/μs
R
g
= 5
TEST CONDITIONS
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
V
CC
= 480 V, I
C
= 50 A, V
GE
= 15 V,
R
g
= 5
,
T
J
= 25 °C,
energy losses include tail and diode
reverse recovery
V
CC
= 480 V, I
C
= 50 A, V
GE
= 15 V,
R
g
= 5
,
T
J
= 125 °C,
energy losses include tail and diode
reverse recovery
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
V
R
= 600 V, f = 1.0 MHz
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
370
64
163
0.7
1.7
2.4
1.1
2.5
3.6
9800
602
121
118
99
6.5
320
236
MAX.
555
96
245
1.2
2.6
3.8
mJ
1.7
3.8
5.5
14 700
903
pF
182
177
150
9.8
735
-
ns
A
nC
A/μs
nC
UNITS
Revision: 17-Jun-11
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
50MT060ULSTAPbF
www.vishay.com
Vishay Semiconductors
THERMISTOR SPECIFICATIONS
PARAMETER
Resistance
Sensitivity index of the
thermistor material
SYMBOL
R
0 (1)
(1)(2)
T
0
= 25 °C
T
0
= 25 °C
T
1
= 85 °C
TEST CONDITIONS
MIN.
-
-
TYP.
30
4000
MAX.
-
-
UNITS
k
K
Notes
(1)
T , T are thermistor´s temperatures
0
1
R
0
1
1
(2)
------
=
exp
-----
–
-----
, temperature in Kelvin
-
-
-
T
R
T
1
0
1
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
Junction to case
Case to sink per module
Mounting torque to heatsink ± 10 %
Weight
IGBT
Diode
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
TEST CONDITIONS
MIN.
- 40
- 40
-
-
-
TYP.
-
-
-
-
0.06
3
66
MAX.
150
125
0.28
0.6
-
Nm
g
°C/W
UNITS
°C
100
75
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Power Dissipation = 92W
Load Current ( A )
50
25
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency (Load Current = I
RMS
of Fundamental)
Revision: 17-Jun-11
3
For technical questions, contact:
indmodules@vishay.com
Document Number: 94540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
50MT060ULSTAPbF
www.vishay.com
Vishay Semiconductors
120
100
T
J
= 150°C
IC Maximum DC Collector Current (A)
I
C
, Collector-to-Emitter Current (A)
100
80
60
40
20
0
T
J
= 25°C
10
Vge = 15V
380
μ
s Pulse Width
1
0.6
1.0
1.4
1.8
2.2
25
50
75
100
125
150
V
CE
, Collector-to-Emitter Voltage (V)
TC Case Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
1000.0
2
VCE , Collector-to Emitter Voltage (V)
IC, Collector-to-Emitter Current (A)
T J = 150°C
100.0
IC = 100A
1.75
IC = 50A
1.5
T J = 25°C
10.0
1.25
IC = 25A
1.0
5.0
5.5
VCC = 50V
20µs PULSE WIDTH
6.0
6.5
1
20
40
60
80
100
120
140
160
VGE, Gate-to-Emitter Voltage (V)
T J , Junction Temperature (°C)
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.01
0.20
0.10
0.05
0.01
0.02
τ
J
R
1
R
1
?
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
?
?
3
Ri (°C/W)
0.060
0.130
0.100
τi
(sec)
0.000968
0.019621
0.051755
0.001
?
1
?
2
Ci=
τi/Ri
Ci i?Ri
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Revision: 17-Jun-11
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
50MT060ULSTAPbF
www.vishay.com
Vishay Semiconductors
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.01
0.01
0.02
τ
J
R
1
R
1
?
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
?
?
3
Ri (°C/W)
0.200
0.296
0.102
τi
(sec)
0.000993
0.038934
0.52648
?
1
?
2
0.001
Ci=
τi/Ri
Ci i?Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 7 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
14000
12000
VGE = 0V, f = 1 MHZ
C
= C +C , C SHORTED
ies
ge
gc ce
Cres = Cgc
5.0
VCC = 480V
VGE = 15V
4.0
C, Capacitance (pF)
10000
8000
Switching Losses (mJ)
Cies
C
oes
=C +C
ce
gc
TJ = 25°C
I C = 100A
EOFF
3.0
Coes
6000
4000
2000
0
1
10
100
1000
2.0
EON
1.0
Cres
0.0
0
10
20
30
VDS, Drain-to-Source Voltage (V)
R g , Gate Resistance (
Ω
)
Fig. 8 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Gate Resistance
20.0
IC= 100A
VCE = 480V
Total Switching Losses (mJ)
100
RG = 5.0Ω
VGE = 15V
VCC = 480V
10
I C = 100A
I C = 50A
VGE , Gate-to-Emitter Voltage (V)
16.0
12.0
8.0
I C = 25A
1
4.0
0.0
0
100
200
300
400
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Q G, Total Gate Charge (nC)
T J , Junction Temperature (°C)
Fig. 9 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 11 - Typical Switching Losses vs. Junction Temperature
Revision: 17-Jun-11
5
For technical questions, contact:
indmodules@vishay.com
Document Number: 94540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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