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10ETF10STRRPBF

Description
10 A, 1000 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size224KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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10ETF10STRRPBF Overview

10 A, 1000 V, SILICON, RECTIFIER DIODE

10ETF10STRRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AC
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresFREE WHEELING DIODE
applicationFAST SOFT RECOVERY HIGH POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.33 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current185 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.31 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
Base
common
cathode
+
2
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
3
- Anode
D
2
PAK (SMD-220)
1
Anode -
APPLICATIONS
• Output rectification and freewheeling in
inverters, choppers and converters
• Input rectifications where severe restrictions
conducted EMI should be met
on
PRODUCT SUMMARY
V
F
at 10 A
t
rr
V
RRM
< 1.33 V
80 ns
1000 V/1200 V
DESCRIPTION
The VS-10ETF..SPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
10 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
10
1000/1200
160
1.33
80
- 40 to 150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF10SPbF
VS-10ETF12SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 125 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
160
185
128
180
1800
A
2
s
A
2
√s
A
UNITS
Document Number: 94094
Revision: 26-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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