FCH25N60N N-Channel MOSFET
FCH25N60N
Features
SupreMOS®
January 2011
tm
N-Channel MOSFET
600V, 25A, 0.126Ω
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSF ET fits the industry’ s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
• R
DS(on)
= 0.108Ω ( Typ.) at V
GS
= 10V, I
D
= 12.5A
• Ultra Low Gate Charge ( Typ. Qg = 57nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
D
G
G D
S
TO-247
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
GSS
I
D
E
AS
E
AR
I
DM
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(T
C
= 25
o
C)
(Note 3)
Continuous (T
C
=
Continuous (T
C
= 25 C)
o
Parameter
FCH25N60N
600
±30
25
16
(Note 1)
(Note 2)
75
861
8.3
2.2
20
100
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W/
o
C
o
o
100
o
C)
Pulsed
I
AR
dv/dt
P
D
T
J
, T
STG
T
L
216
1.72
-55 to +150
300
W
Derate above 25 C
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
*Drain current limited by maximum junction temperature
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
1
FCH25N60N
0.58
0.24
40
Units
o
C/W
©2011 Fairchild Semiconductor Corporation
FCH25N60N Rev. A2
www.fairchildsemi.com
FCH25N60N N-Channel MOSFET
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Device Marking
FCH25N60N
Device
FCH25N60N
Package
TO247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Parameter
Test Conditions
I
D
= 1mA, V
GS
= 0V,T
J
= 25
o
C
I
D
= 1mA, Referenced to 25
o
C
V
DS
= 480V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= 480V, T
J
= 125 C
o
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
600
-
-
-
-
-
0.74
-
-
-
-
-
10
100
±100
V
V/
o
C
μA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 10V, I
D
= 12.5A
V
DS
= 20V, I
D
= 12.5A
V
GS
= V
DS
, I
D
= 250μA
2.0
-
-
-
0.108
4.0
0.126
-
V
Ω
S
Dynamic Characteristics
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
C
oss
C
rss
C
oss
V
DS
= 100V, V
GS
= 0V
f = 1MHz
V
DS
= 380V, V
GS
= 0V, f = 1MHz
V
DS
= 0V to 480V, V
GS
= 0V
V
DS
= 380V, I
D
= 12.5A,
V
GS
= 10V
Drain Open, f=1MHz
-
-
-
-
-
-
-
(Note 4)
2520
103
3.2
55
262
57
10
18
1
3352
137
5
-
-
74
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
C
oss
eff.
Q
gs
Q
g(tot)
Q
gd
ESR
-
-
Switching Characteristics
t
r
t
f
t
d(on)
t
d(off)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 380V, I
D
= 12.5A
R
G
= 4.7Ω
(Note 4)
-
-
-
-
21
22
68
5
52
54
146
20
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 12.5A
V
GS
= 0V, I
SD
= 12.5A
dI
F
/dt = 100A/μs
-
-
-
-
-
-
-
-
370
7
25
75
1.2
-
-
A
A
V
ns
μC
I
SM
t
rr
V
SD
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 8.3A, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
25A, di/dt
≤
200A/μs, V
DD
≤
380V, Starting T
J
= 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCH25N60N Rev. A2
2
www.fairchildsemi.com
FCH25N60N N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
V
GS
= 15V
10V
8V
6V
4V
Figure 2. Transfer Characteristics
100
I
D
, Drain Current[A]
I
D
, Drain Current[A]
10
25 C
o
10
150 C
o
-55 C
o
1
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25 C
o
0.3
0.05 0.1
1
10
V
DS
, Drain-Source Voltage[V]
30
1
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
2
4
6
V
GS
, Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
R
DS(ON)
[
m
Ω
]
,
Drain-Source On-Resistance
I
S
, Reverse Drain Current [A]
300
150 C
o
250
10
200
25 C
o
V
GS
= 10V
V
GS
= 20V
150
100
*Note: T
C
= 25 C
o
*Notes:
1. V
GS
= 0V
0
20
40
60
I
D
, Drain Current [A]
80
1
0.4
2. 250
μ
s Pulse Test
0.6
0.8
1.0
V
SD
, Body Diode Forward Voltage [V]
1.2
Figure 5. Capacitance Characteristics
10
5
Figure 6. Gate Charge Characteristics
10
V
GS
, Gate-Source Voltage [V]
C
oss
10
Capacitances [pF]
4
8
C
iss
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
10
3
6
C
rss
10
2
10
1
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
4
2
*Note: I
D
= 12.5A
10
0
0.1
1
10
100
V
DS
, Drain-Source Voltage [V]
600
0
0
10
20
30
40
50
Q
g
, Total Gate Charge [nC]
60
FCH25N60N Rev. A2
3
www.fairchildsemi.com
FCH25N60N N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation
vs. Temperature
3.0
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. V
GS
= 10V
2. I
D
= 12.5A
1.1
1.0
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 1mA
0.8
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
Figure 9. Maximum Safe Operating Area
100
100
μ
s
10
μ
s
Figure 10. Maximum Drain Current
vs. Case Temperature
30
25
I
D
, Drain Current [A]
20
15
10
5
0
25
I
D
, Drain Current [A]
10
DC
1ms
10ms
1
Operation in This Area
is Limited by R
DS(on)
*Notes:
0.1
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0.01
1
10
100
V
DS
, Drain-Source Voltage [V]
1000
50
75
100
125
o
T
C
, Case Temperature
[
C
]
150
Figure 11. Transient Thermal Response Curve
1
Thermal Response
[
Z
θ
JC
]
0.5
0.2
0.1
0.05
0.02
0.1
P
DM
t
1
t
2
o
0.01
0.01
*Notes:
Single pulse
1E-3
-5
10
1. Z
θ
JC
(t) = 0.58 C/W Max.
2. Duty Factor, D = t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
10
-4
10
10
10
Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
FCH25N60N Rev. A2
4
www.fairchildsemi.com
FCH25N60N N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH25N60N Rev. A2
5
www.fairchildsemi.com
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