HMC907
v00.0310
GaAs PHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Features
high p1dB output power: +27 dBm
high Gain: 14 dB
high output ip3: +38 dBm
single supply: +10V @ 350 mA
50 ohm matched input/output
Die size: 2.91 x 1.33 x 0.1 mm
Typical Applications
The hmC907 is ideal for:
• Test instrumentation
• microwave radio & VsAT
• military & space
• Telecom infrastructure
3
Amplifiers - lineAr & power - Chip
• fiber optics
Functional Diagram
General Description
The hmC907 is a GaAs mmiC phemT Distributed
power Amplifier die which operates between 0.2 and
22 Ghz. This self-biased power amplifier provides
14 dB of gain, 38 dBm output ip3 and +27 dBm of
output power at 1 dB gain compression while requir-
ing only 350mA from a +10V supply. Gain flatness is
excellent at ±0.6 dB from DC to 12 Ghz making the
hmC907 ideal for ew, eCm, radar and test equip-
ment applications. The hmC907 amplifier i/os are
internally matched to 50 ohms facilitating integration
into mutli-Chip-modules (mCms). All data is taken
with the chip connected via two 0.025mm (1 mil) wire
bonds of minimal 0.31 mm (12 mils) length.
Electrical Specifications,
T
A
= +25 °C, Vdd = +10V, Idd = 350mA
parameter
frequency range
Gain
Gain flatness
Gain Variation over Temperature
input return loss
output return loss
output power for 1 dB Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
noise figure
supply Current
(idd) (Vdd= 10V)
23
12
min.
Typ.
0.2 - 8
13.5
±0.6
0.008
15
15
26
28.5
37
3.5
350
25
12
max.
min.
Typ.
8 - 16
13.5
±0.5
0.008
15
20
27
29.5
38
2.5
350
23
12.5
max.
min.
Typ.
16 - 22
14
±0.3
0.009
15
15
25.5
28.5
37
3.0
350
max.
Units
Ghz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC907
v00.0310
GaAs PHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Gain vs. Temperature
16
Gain & Return Loss
30
20
RESPONSE (dB)
10
14
GAIN (dB)
0
-10
-20
-30
-40
0
5
10
15
S21
S11
S22
12
+25C
+85C
-55C
3
0
4
8
12
16
20
24
10
8
6
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25C
+85C
-55C
RETURN LOSS (dB)
-20
RETURN LOSS (dB)
-10
-10
-20
-30
+25C
+85C
-55C
-30
-40
0
4
8
12
16
20
24
FREQUENCY (GHz)
-40
0
4
8
12
16
20
24
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
Noise Figure vs. Frequency
7
6
NOISE FIGURE (dB)
ISOLATION (dB)
-20
-30
-40
-50
-60
0
4
8
+25C
+85C
-55C
5
4
3
2
1
0
12
16
20
24
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3-2
Amplifiers - lineAr & power - Chip
HMC907
v00.0310
GaAs PHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Psat vs. Temperature
32
P1dB vs. Frequency
32
30
+25C
+85C
-55C
30
28
26
24
22
20
+25C
+85C
-55C
P1dB (dBm)
26
24
22
20
0
4
8
12
16
20
24
FREQUENCY (GHz)
Amplifiers - lineAr & power - Chip
Psat (dBm)
3
28
0
4
8
12
16
20
24
FREQUENCY (GHz)
Output IP3 vs. Temperature
@ Pout = 16 dBm Tone
50
+25C
+85C
-55C
Output IP3 vs. Output Power @ 12 GHz
50
9V
10V
11V
45
45
IP3 (dBm)
35
IP3 (dBm)
0
4
8
12
16
20
24
40
40
35
30
30
25
FREQUENCY (GHz)
25
10
12
14
16
18
20
22
24
OUTPUT POWER (dBm)
Gain, Power & Output IP3 vs.
Supply Voltage @ 12 GHz
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
45
40
35
30
25
20
15
10
9
9.5
10
Vdd (V)
10.5
11
Gain
P1dB
Psat
IP3
3-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC907
v00.0310
GaAs PHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Power Compression @ 12 GHz
32
Pout (dBm), GAIN (dB), PAE (%)
28
24
20
16
12
8
4
0
Pout
Gain
PAE
Power Compression @ 2 GHz
32
Pout (dBm), GAIN (dB), PAE (%)
28
24
20
16
12
8
4
0
0
4
8
12
16
20
INPUT POWER (dBm)
Pout
Gain
PAE
3
8
12
16
20
0
4
INPUT POWER (dBm)
Power Compression @ 20 GHz
32
Pout (dBm), GAIN (dB), PAE (%)
28
24
20
16
12
8
4
0
0
4
8
12
16
20
INPUT POWER (dBm)
Pout
Gain
PAE
Power Dissipation
6
5
4
3
2
1
0
0
4
8
12
16
20
INPUT POWER (dBm)
Max Pdis @ 85C
2GHz
20GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3-4
Amplifiers - lineAr & power - Chip
POWER DISSIPATION (W)
HMC907
v00.0310
GaAs PHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Typical Supply Current vs. Vdd
Vdd (V)
+9
+10
+11
idd (mA)
350
350
350
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
rf input power (rfin)(Vdd = +11V)
+11 Vdc
+20 dBm
150 °C
4.1 w
15.8 °C/w
-65 to 150°C
-55 to 85 °C
3
Amplifiers - lineAr & power - Chip
Channel Temperature
Continuous pdiss (T= 85 °C)
(derate 63 mw/°C above 85 °C)
Thermal resistance
(channel to die bottom)
storage Temperature
operating Temperature
eleCTrosTATiC sensiTiVe DeViCe
oBserVe hAnDlinG preCAUTions
Outline Drawing
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.
Die Packaging Information
standard
wp-9 (waffle pack)
[1]
noTes:
1. All Dimensions in inChes [millimeTers]
2. Die ThiCKness is 0.004 (0.100)
3. TYpiCAl BonD pAD is 0.004 (0.100) sQUAre
4. BonD pAD meTAliZATion: GolD
5. BACKsiDe meTAlliZATion: GolD
6. BACKsiDe meTAl is GroUnD
7. no ConneCTion reQUireD for UnlABeleD BonD pADs
8. oVerAll Die siZe is ±.002
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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